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Deposition of semiconducting single-walled carbon nanotubes using light-assisted dielectrophoresis

Li, Wenshan and Pyatkov, Feliks and Dehm, Simone and Flavel, Benjamin S. and Krupke, Ralph (2014):
Deposition of semiconducting single-walled carbon nanotubes using light-assisted dielectrophoresis.
In: physica status solidi (b), WILEY-VCH Verlag GmbH & Co. KGaA, pp. 2475-2479, 251, (12), ISSN 03701972,
[Online-Edition: http://dx.doi.org/10.1002/pssb.201451280],
[Article]

Abstract

Dielectrophoresis (DEP) is an established method for the integration of solution-processed single-walled carbon nanotubes into nanoscale device structures. However, this method is less effective for small-diameter semiconducting nanotubes and leads to an enrichment of metallic tubes in multi-tube devices. In this work, we present the first results of a novel light-assisted DEP technique, which enhances the deposition of (6,5) semiconducting carbon nanotubes. Transistors fabricated with this technique show higher on/off ratios compared to transistors that were fabricated by conventional DEP. We explain this effect by an enhanced polarizability of the irradiated semiconducting nanotubes and discuss spontaneous and field-driven exciton dissociation as the underlying mechanism. Strategies to further improve the effect are also proposed.

Item Type: Article
Erschienen: 2014
Creators: Li, Wenshan and Pyatkov, Feliks and Dehm, Simone and Flavel, Benjamin S. and Krupke, Ralph
Title: Deposition of semiconducting single-walled carbon nanotubes using light-assisted dielectrophoresis
Language: English
Abstract:

Dielectrophoresis (DEP) is an established method for the integration of solution-processed single-walled carbon nanotubes into nanoscale device structures. However, this method is less effective for small-diameter semiconducting nanotubes and leads to an enrichment of metallic tubes in multi-tube devices. In this work, we present the first results of a novel light-assisted DEP technique, which enhances the deposition of (6,5) semiconducting carbon nanotubes. Transistors fabricated with this technique show higher on/off ratios compared to transistors that were fabricated by conventional DEP. We explain this effect by an enhanced polarizability of the irradiated semiconducting nanotubes and discuss spontaneous and field-driven exciton dissociation as the underlying mechanism. Strategies to further improve the effect are also proposed.

Journal or Publication Title: physica status solidi (b)
Volume: 251
Number: 12
Publisher: WILEY-VCH Verlag GmbH & Co. KGaA
Uncontrolled Keywords: dielectrophoresis, exciton dissociation, nanotube, polarizability
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Fachgebiet Molekulare Nanostrukturen
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences
Date Deposited: 08 Jan 2015 12:12
Official URL: http://dx.doi.org/10.1002/pssb.201451280
Identification Number: doi:10.1002/pssb.201451280
Funders: Funded by Helmholtz Research Program Science and Technology of Nanosystems (STN), Funded by Deutsche Forschungsgemeinschaft's Emmy Noether Program. Grant Number: FL 834/1-1
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