Hohmann, Mareike V. ; Wachau, André ; Klein, Andreas (2014)
In situ Hall effect and conductivity measurements of ITO thin films.
In: Solid State Ionics, 262
doi: 10.1016/j.ssi.2013.10.004
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
The application of transparent conductive oxides in most electronic devices requires a good knowledge of their electrical properties such as conductivity, but also carrier mobility. In addition, oxygen exchange plays a crucial role for post-deposition treatments and the functionality of devices. In order to elucidate the relation between electrical properties and oxygen equilibration a system for in situ Hall effect and electrical conductivity measurements of oxide thin films has been set up, giving the opportunity for temperature dependent measurements in controlled atmosphere. The use of the setup is exemplified with a Sn-doped In2O3 (ITO) thin film. The results show that oxygen equilibration is not the only factor which affects the electrical properties, but also other long term processes. The segregation of Sn to grain boundaries is discussed in this context.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2014 |
| Autor(en): | Hohmann, Mareike V. ; Wachau, André ; Klein, Andreas |
| Art des Eintrags: | Bibliographie |
| Titel: | In situ Hall effect and conductivity measurements of ITO thin films |
| Sprache: | Englisch |
| Publikationsjahr: | 1 September 2014 |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Solid State Ionics |
| Jahrgang/Volume einer Zeitschrift: | 262 |
| DOI: | 10.1016/j.ssi.2013.10.004 |
| Kurzbeschreibung (Abstract): | The application of transparent conductive oxides in most electronic devices requires a good knowledge of their electrical properties such as conductivity, but also carrier mobility. In addition, oxygen exchange plays a crucial role for post-deposition treatments and the functionality of devices. In order to elucidate the relation between electrical properties and oxygen equilibration a system for in situ Hall effect and electrical conductivity measurements of oxide thin films has been set up, giving the opportunity for temperature dependent measurements in controlled atmosphere. The use of the setup is exemplified with a Sn-doped In2O3 (ITO) thin film. The results show that oxygen equilibration is not the only factor which affects the electrical properties, but also other long term processes. The segregation of Sn to grain boundaries is discussed in this context. |
| Freie Schlagworte: | Hall effect; ITO; Oxygen defects; Sn segregation; Defect equilibrium |
| Zusätzliche Informationen: | SFB 595 D3 |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Oberflächenforschung Zentrale Einrichtungen DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche > SFB 595: Elektrische Ermüdung DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche > SFB 595: Elektrische Ermüdung > D - Bauteileigenschaften DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche > SFB 595: Elektrische Ermüdung > D - Bauteileigenschaften > Teilprojekt D3: Funktion und Ermüdung oxidischer Elektroden in organischen Leuchtdioden 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche DFG-Sonderforschungsbereiche (inkl. Transregio) |
| Hinterlegungsdatum: | 15 Dez 2014 11:43 |
| Letzte Änderung: | 29 Mär 2015 17:22 |
| PPN: | |
| Sponsoren: | This work has been supported by the Deutsche Forschungsgemeinschaft (DFG) within the collaborative research center SFB 595 (Electrical Fatigue of Functional Materials). , We gratefully acknowledge the contribution of T.O. Mason, Northwestern University (Evanston, IL). The experimental facilities described in this contribution were initiated during a collaborative NSF/DFG materials world network project. |
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