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In situ Hall effect and conductivity measurements of ITO thin films

Hohmann, Mareike V. and Wachau, André and Klein, Andreas (2014):
In situ Hall effect and conductivity measurements of ITO thin films.
In: Solid State Ionics, pp. 636-639, 262, ISSN 01672738,
[Online-Edition: http://dx.doi.org/10.1016/j.ssi.2013.10.004],
[Article]

Abstract

The application of transparent conductive oxides in most electronic devices requires a good knowledge of their electrical properties such as conductivity, but also carrier mobility. In addition, oxygen exchange plays a crucial role for post-deposition treatments and the functionality of devices. In order to elucidate the relation between electrical properties and oxygen equilibration a system for in situ Hall effect and electrical conductivity measurements of oxide thin films has been set up, giving the opportunity for temperature dependent measurements in controlled atmosphere. The use of the setup is exemplified with a Sn-doped In2O3 (ITO) thin film. The results show that oxygen equilibration is not the only factor which affects the electrical properties, but also other long term processes. The segregation of Sn to grain boundaries is discussed in this context.

Item Type: Article
Erschienen: 2014
Creators: Hohmann, Mareike V. and Wachau, André and Klein, Andreas
Title: In situ Hall effect and conductivity measurements of ITO thin films
Language: English
Abstract:

The application of transparent conductive oxides in most electronic devices requires a good knowledge of their electrical properties such as conductivity, but also carrier mobility. In addition, oxygen exchange plays a crucial role for post-deposition treatments and the functionality of devices. In order to elucidate the relation between electrical properties and oxygen equilibration a system for in situ Hall effect and electrical conductivity measurements of oxide thin films has been set up, giving the opportunity for temperature dependent measurements in controlled atmosphere. The use of the setup is exemplified with a Sn-doped In2O3 (ITO) thin film. The results show that oxygen equilibration is not the only factor which affects the electrical properties, but also other long term processes. The segregation of Sn to grain boundaries is discussed in this context.

Journal or Publication Title: Solid State Ionics
Volume: 262
Uncontrolled Keywords: Hall effect; ITO; Oxygen defects; Sn segregation; Defect equilibrium
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Surface Science
Zentrale Einrichtungen
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue > D - Component properties
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue > D - Component properties > Subproject D3: Function and fatigue of oxide electrodes in organic light emitting diodes
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres
DFG-Collaborative Research Centres (incl. Transregio)
Date Deposited: 15 Dec 2014 11:43
Official URL: http://dx.doi.org/10.1016/j.ssi.2013.10.004
Additional Information:

SFB 595 D3

Identification Number: doi:10.1016/j.ssi.2013.10.004
Funders: This work has been supported by the Deutsche Forschungsgemeinschaft (DFG) within the collaborative research center SFB 595 (Electrical Fatigue of Functional Materials). , We gratefully acknowledge the contribution of T.O. Mason, Northwestern University (Evanston, IL). The experimental facilities described in this contribution were initiated during a collaborative NSF/DFG materials world network project.
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