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Load-modulated GaN power amplifier implementing tunable thick film BST components

Arnous, M. T. and Wiens, A. and Preis, S. and Maune, H. and Bathich, K. and Nikfalazar, M. and Jakoby, R. and Boeck, G. (2013):
Load-modulated GaN power amplifier implementing tunable thick film BST components.
In: Microwave Conference (EuMC), 2013 European, [Conference or Workshop Item]

Item Type: Conference or Workshop Item
Erschienen: 2013
Creators: Arnous, M. T. and Wiens, A. and Preis, S. and Maune, H. and Bathich, K. and Nikfalazar, M. and Jakoby, R. and Boeck, G.
Title: Load-modulated GaN power amplifier implementing tunable thick film BST components
Language: English
Uncontrolled Keywords: III-V semiconductors;UHF power amplifiers;barium compounds;gallium compounds;high electron mobility transistors;semiconductor device breakdown;strontium compounds;varactors;wide band gap semiconductors;π-structure matching topology;BaSrTiO3;GaN;adaptive broadband power amplifier design;back-off output power operation;barium-strontium-titanate components;breakdown voltage;class C power amplifier;commercial GaN HEMT;dynamic load modulation;frequency 1.8 GHz to 2.2 GHz;impedance tunability;load-modulated GaN power amplifier;optimum load impedance;output matching network;tunable thick film BST components;varactors;Broadband communication;Impedance;Power amplifiers;Power generation;Power measurement;Transistors;Voltage measurement;Adaptive matching;BST;GaN HEMT;broadband;dynamic load;efficiency enhancement;ferroelectrics;load modulation;power amplifer;tunable component
Divisions: 18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics > Microwave Engineering
18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics
Event Title: Microwave Conference (EuMC), 2013 European
Date Deposited: 08 Dec 2014 13:06
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