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Load-modulated GaN power amplifier implementing tunable thick film BST components

Arnous, M. T. ; Wiens, A. ; Preis, S. ; Maune, H. ; Bathich, K. ; Nikfalazar, M. ; Jakoby, R. ; Boeck, G. (2013):
Load-modulated GaN power amplifier implementing tunable thick film BST components.
pp. 1387-1390, Microwave Conference (EuMC), 2013 European, [Conference or Workshop Item]

Item Type: Conference or Workshop Item
Erschienen: 2013
Creators: Arnous, M. T. ; Wiens, A. ; Preis, S. ; Maune, H. ; Bathich, K. ; Nikfalazar, M. ; Jakoby, R. ; Boeck, G.
Title: Load-modulated GaN power amplifier implementing tunable thick film BST components
Language: English
Uncontrolled Keywords: III-V semiconductors;UHF power amplifiers;barium compounds;gallium compounds;high electron mobility transistors;semiconductor device breakdown;strontium compounds;varactors;wide band gap semiconductors;π-structure matching topology;BaSrTiO3;GaN;adaptive broadband power amplifier design;back-off output power operation;barium-strontium-titanate components;breakdown voltage;class C power amplifier;commercial GaN HEMT;dynamic load modulation;frequency 1.8 GHz to 2.2 GHz;impedance tunability;load-modulated GaN power amplifier;optimum load impedance;output matching network;tunable thick film BST components;varactors;Broadband communication;Impedance;Power amplifiers;Power generation;Power measurement;Transistors;Voltage measurement;Adaptive matching;BST;GaN HEMT;broadband;dynamic load;efficiency enhancement;ferroelectrics;load modulation;power amplifer;tunable component
Divisions: 18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics > Microwave Engineering
18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics
Event Title: Microwave Conference (EuMC), 2013 European
Date Deposited: 08 Dec 2014 13:06
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