TU Darmstadt / ULB / TUbiblio

Highly conducting SrMoO3 thin films for microwave applications

Radetinac, Aldin and Mani, Arzhang and Melnyk, Sergiy and Nikfalazar, Mohammad and Ziegler, Jürgen and Zheng, Yuliang and Jakoby, Rolf and Alff, Lambert and Komissinskiy, Philipp (2014):
Highly conducting SrMoO3 thin films for microwave applications.
In: Applied Physics Letters, AIP Publishing LLC, p. 114108, 105, (11), ISSN 0003-6951, [Online-Edition: http://dx.doi.org/10.1063/1.4896339],
[Article]

Abstract

We have measured the microwave resistance of highly conducting perovskite oxide SrMoO3 thin film coplanar waveguides. The epitaxial SrMoO3 thin films were grown by pulsed laser deposition and showed low mosaicity and smooth surfaces with a root mean square roughness below 0.3 nm. Layer-by-layer growth could be achieved for film thicknesses up to 400 nm as monitored by reflection high-energy electron diffraction and confirmed by X-ray diffraction. We obtained a constant microwave resistivity of 29 μΩ·cm between 0.1 and 20 GHz by refining the frequency dependence of the transmission coefficients. Our result shows that SrMoO3 is a viable candidate as a highly conducting electrode material for all-oxide microwave electronic devices.

Item Type: Article
Erschienen: 2014
Creators: Radetinac, Aldin and Mani, Arzhang and Melnyk, Sergiy and Nikfalazar, Mohammad and Ziegler, Jürgen and Zheng, Yuliang and Jakoby, Rolf and Alff, Lambert and Komissinskiy, Philipp
Title: Highly conducting SrMoO3 thin films for microwave applications
Language: English
Abstract:

We have measured the microwave resistance of highly conducting perovskite oxide SrMoO3 thin film coplanar waveguides. The epitaxial SrMoO3 thin films were grown by pulsed laser deposition and showed low mosaicity and smooth surfaces with a root mean square roughness below 0.3 nm. Layer-by-layer growth could be achieved for film thicknesses up to 400 nm as monitored by reflection high-energy electron diffraction and confirmed by X-ray diffraction. We obtained a constant microwave resistivity of 29 μΩ·cm between 0.1 and 20 GHz by refining the frequency dependence of the transmission coefficients. Our result shows that SrMoO3 is a viable candidate as a highly conducting electrode material for all-oxide microwave electronic devices.

Journal or Publication Title: Applied Physics Letters
Volume: 105
Number: 11
Publisher: AIP Publishing LLC
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Advanced Thin Film Technology
11 Department of Materials and Earth Sciences > Material Science > Surface Science
Date Deposited: 17 Nov 2014 13:29
Official URL: http://dx.doi.org/10.1063/1.4896339
Identification Number: doi:10.1063/1.4896339
Funders: This work was supported by the Deutsche Forschungsgemeinschaft within KO 4093/1-1 and JA 921/31-1.
Export:

Optionen (nur für Redakteure)

View Item View Item