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Highly conducting SrMoO3 thin films for microwave applications

Radetinac, Aldin ; Mani, Arzhang ; Melnyk, Sergiy ; Nikfalazar, Mohammad ; Ziegler, Jürgen ; Zheng, Yuliang ; Jakoby, Rolf ; Alff, Lambert ; Komissinskiy, Philipp (2014)
Highly conducting SrMoO3 thin films for microwave applications.
In: Applied Physics Letters, 105 (11)
doi: 10.1063/1.4896339
Artikel, Bibliographie

Kurzbeschreibung (Abstract)

We have measured the microwave resistance of highly conducting perovskite oxide SrMoO3 thin film coplanar waveguides. The epitaxial SrMoO3 thin films were grown by pulsed laser deposition and showed low mosaicity and smooth surfaces with a root mean square roughness below 0.3 nm. Layer-by-layer growth could be achieved for film thicknesses up to 400 nm as monitored by reflection high-energy electron diffraction and confirmed by X-ray diffraction. We obtained a constant microwave resistivity of 29 μΩ·cm between 0.1 and 20 GHz by refining the frequency dependence of the transmission coefficients. Our result shows that SrMoO3 is a viable candidate as a highly conducting electrode material for all-oxide microwave electronic devices.

Typ des Eintrags: Artikel
Erschienen: 2014
Autor(en): Radetinac, Aldin ; Mani, Arzhang ; Melnyk, Sergiy ; Nikfalazar, Mohammad ; Ziegler, Jürgen ; Zheng, Yuliang ; Jakoby, Rolf ; Alff, Lambert ; Komissinskiy, Philipp
Art des Eintrags: Bibliographie
Titel: Highly conducting SrMoO3 thin films for microwave applications
Sprache: Englisch
Publikationsjahr: 19 September 2014
Verlag: AIP Publishing LLC
Titel der Zeitschrift, Zeitung oder Schriftenreihe: Applied Physics Letters
Jahrgang/Volume einer Zeitschrift: 105
(Heft-)Nummer: 11
DOI: 10.1063/1.4896339
Kurzbeschreibung (Abstract):

We have measured the microwave resistance of highly conducting perovskite oxide SrMoO3 thin film coplanar waveguides. The epitaxial SrMoO3 thin films were grown by pulsed laser deposition and showed low mosaicity and smooth surfaces with a root mean square roughness below 0.3 nm. Layer-by-layer growth could be achieved for film thicknesses up to 400 nm as monitored by reflection high-energy electron diffraction and confirmed by X-ray diffraction. We obtained a constant microwave resistivity of 29 μΩ·cm between 0.1 and 20 GHz by refining the frequency dependence of the transmission coefficients. Our result shows that SrMoO3 is a viable candidate as a highly conducting electrode material for all-oxide microwave electronic devices.

Fachbereich(e)/-gebiet(e): 11 Fachbereich Material- und Geowissenschaften
11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft
11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Dünne Schichten
11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Oberflächenforschung
Hinterlegungsdatum: 17 Nov 2014 13:29
Letzte Änderung: 29 Mär 2015 17:39
PPN:
Sponsoren: This work was supported by the Deutsche Forschungsgemeinschaft within KO 4093/1-1 and JA 921/31-1.
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