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Charge compensation of head-to-head and tail-to-tail domain walls in barium titanate and its influence on conductivity

Zuo, Yinan and Genenko, Yuri A. and Xu, Bai-Xiang (2014):
Charge compensation of head-to-head and tail-to-tail domain walls in barium titanate and its influence on conductivity.
In: Journal of Applied Physics, pp. 044109(1-6), 116, (4), ISSN 0021-8979,
[Online-Edition: http://dx.doi.org/10.1063/1.4891259],
[Article]

Abstract

The effect of the polarization charge compensation by ionic and electronic space charges on domain properties in ferroelectrics with semiconducting features is considered, in particular, the conductivity of head-to-head and tail-to-tail domain walls is studied. It is shown that the domain wall conductivity that is enhanced by electrons or holes depends on the configuration and the types of domains as well as on the energy levels and concentrations of the defects involved. Phase field simulation results are used to explain recent equivocal experimental results on conductivity of charged domain walls in different ferroelectrics.

Item Type: Article
Erschienen: 2014
Creators: Zuo, Yinan and Genenko, Yuri A. and Xu, Bai-Xiang
Title: Charge compensation of head-to-head and tail-to-tail domain walls in barium titanate and its influence on conductivity
Language: English
Abstract:

The effect of the polarization charge compensation by ionic and electronic space charges on domain properties in ferroelectrics with semiconducting features is considered, in particular, the conductivity of head-to-head and tail-to-tail domain walls is studied. It is shown that the domain wall conductivity that is enhanced by electrons or holes depends on the configuration and the types of domains as well as on the energy levels and concentrations of the defects involved. Phase field simulation results are used to explain recent equivocal experimental results on conductivity of charged domain walls in different ferroelectrics.

Journal or Publication Title: Journal of Applied Physics
Volume: 116
Number: 4
Uncontrolled Keywords: Domain walls; Vacancies; Doping; Ferroelectricity; Manganese
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Mechanics of functional Materials
11 Department of Materials and Earth Sciences > Material Science > Materials Modelling
Zentrale Einrichtungen
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue > C - Modelling
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue > C - Modelling > Subproject C5: Phenomenological modelling of injection, transport and recombination in organic semiconducting devices as well as in inorganic ferroelectric materials
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue > C - Modelling > Subproject C6: Micromechanical Simulation on Interaction of Point Defects with Domain Structure in Ferroelectrics
Exzellenzinitiative
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres
DFG-Collaborative Research Centres (incl. Transregio)
Exzellenzinitiative > Graduate Schools > Graduate School of Computational Engineering (CE)
Exzellenzinitiative > Graduate Schools
Date Deposited: 04 Aug 2014 12:04
Official URL: http://dx.doi.org/10.1063/1.4891259
Additional Information:

SFB 595 Cooperation C5, C6

Identification Number: doi:10.1063/1.4891259
Funders: The financial support by the German Science Foundation (Deutsche Forschungsgemeinschaft, Sonderforschungsbereich 595, Fatigue in Functional Materials, Schwerpunktprogramm 1599, , Caloric effects in ferroic materials: New concepts for cooling) is gratefully acknowledged. Proofreading of the manuscript and valuable remarks by Mr. S. Kurdi are gratefully acknowledged.
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