Siol, Sebastian ; Sträter, Hendrik ; Brüggemann, Rudolf ; Broetz, Joachim ; Bauer, Gottfried H. ; Klein, Andreas ; Jaegermann, Wolfram (2013)
PVD of copper sulfide (Cu2S) for PIN-structured solar cells.
In: Journal of Physics D: Applied Physics, 46 (49)
doi: 10.1088/0022-3727/46/49/495112
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
Thin layers of chalcocite (Cu2S) have been deposited via physical vapour deposition using various pre- and post-treatment parameters. The electrical and morphological properties have been investigated by in situ XPS, SEM and XRD measurements. Calibrated photoluminescence experiments were performed to investigate the material's suitability as an absorber layer in thin-film solar cells. Measurements of annealed Cu2S layers on glass without any surface passivation showed an optical band gap of 1.25 eV as well as a splitting of the quasi-Fermi levels of 710 meV. This value exceeds the highest reported open-circuit voltage for Cu2S-based devices so far, which leads to the assumption that Cu2S has not been brought to its full potential yet. The band alignments for ZnO/Cu2S as well as Cu2S/Cu2O interfaces have been determined using in situ XPS interface experiments to suggest a novel device structure according to the favourable PIN-layout. First devices have been built, but show no efficiency due to shunting caused by the inferior morphology of the absorber layers.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2013 |
| Autor(en): | Siol, Sebastian ; Sträter, Hendrik ; Brüggemann, Rudolf ; Broetz, Joachim ; Bauer, Gottfried H. ; Klein, Andreas ; Jaegermann, Wolfram |
| Art des Eintrags: | Bibliographie |
| Titel: | PVD of copper sulfide (Cu2S) for PIN-structured solar cells |
| Sprache: | Englisch |
| Publikationsjahr: | 11 Dezember 2013 |
| Verlag: | IOP Publishing |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Journal of Physics D: Applied Physics |
| Jahrgang/Volume einer Zeitschrift: | 46 |
| (Heft-)Nummer: | 49 |
| DOI: | 10.1088/0022-3727/46/49/495112 |
| Kurzbeschreibung (Abstract): | Thin layers of chalcocite (Cu2S) have been deposited via physical vapour deposition using various pre- and post-treatment parameters. The electrical and morphological properties have been investigated by in situ XPS, SEM and XRD measurements. Calibrated photoluminescence experiments were performed to investigate the material's suitability as an absorber layer in thin-film solar cells. Measurements of annealed Cu2S layers on glass without any surface passivation showed an optical band gap of 1.25 eV as well as a splitting of the quasi-Fermi levels of 710 meV. This value exceeds the highest reported open-circuit voltage for Cu2S-based devices so far, which leads to the assumption that Cu2S has not been brought to its full potential yet. The band alignments for ZnO/Cu2S as well as Cu2S/Cu2O interfaces have been determined using in situ XPS interface experiments to suggest a novel device structure according to the favourable PIN-layout. First devices have been built, but show no efficiency due to shunting caused by the inferior morphology of the absorber layers. |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Oberflächenforschung 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Strukturforschung 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften |
| Hinterlegungsdatum: | 14 Mär 2014 12:26 |
| Letzte Änderung: | 28 Mär 2015 16:24 |
| PPN: | |
| Sponsoren: | This work was supported by the German Bundesministerium für Bildung und Forschung (BMBF) under contract nos. 03SF0358 A and 03SF0358 C (p-i-n Solar Cells with Alternative Highly Absorbing Semiconductors). |
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