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Domain wall stability in ferroelectrics with space charges

Zuo, Yinan and Genenko, Yuri A. and Klein, Andreas and Stein, Peter and Xu, Bai-Xiang (2014):
Domain wall stability in ferroelectrics with space charges.
In: Journal of Applied Physics, pp. 084110, 115, (8), ISSN 0021-8979,
[Online-Edition: http://dx.doi.org/10.1063/1.4866359],
[Article]

Abstract

Significant effect of semiconductor properties on domain configurations in ferroelectrics is demonstrated, especially in the case of doped materials. Phase field simulations are performed for ferroelectrics with space charges due to donors and electronic charge carriers. The free charges introduced thereby can act as a source for charge compensation at domain walls with uncompensated polarization bound charges. Results indicate that the equilibrium position of a domain wall with respect to its rotation in a head-to-head or a tail-to-tail domain configuration depends on the charge defect concentration and the Fermi level position.

Item Type: Article
Erschienen: 2014
Creators: Zuo, Yinan and Genenko, Yuri A. and Klein, Andreas and Stein, Peter and Xu, Bai-Xiang
Title: Domain wall stability in ferroelectrics with space charges
Language: English
Abstract:

Significant effect of semiconductor properties on domain configurations in ferroelectrics is demonstrated, especially in the case of doped materials. Phase field simulations are performed for ferroelectrics with space charges due to donors and electronic charge carriers. The free charges introduced thereby can act as a source for charge compensation at domain walls with uncompensated polarization bound charges. Results indicate that the equilibrium position of a domain wall with respect to its rotation in a head-to-head or a tail-to-tail domain configuration depends on the charge defect concentration and the Fermi level position.

Journal or Publication Title: Journal of Applied Physics
Volume: 115
Number: 8
Uncontrolled Keywords: Domain walls; Polarization; Ferroelectricity; Electric fields; Ferroelectric domain structure; Charge carriers; Vacancies; Barium; Space charge effects; Titanates
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Mechanics of functional Materials
11 Department of Materials and Earth Sciences > Material Science > Materials Modelling
11 Department of Materials and Earth Sciences > Material Science > Surface Science
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue > B - Characterisation > Subproject B7: Polarisation and charging in electrical fatigue ferroelectrics
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue > C - Modelling > Subproject C5: Phenomenological modelling of injection, transport and recombination in organic semiconducting devices as well as in inorganic ferroelectric materials
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue > C - Modelling > Subproject C6: Micromechanical Simulation on Interaction of Point Defects with Domain Structure in Ferroelectrics
11 Department of Materials and Earth Sciences > Material Science
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue > B - Characterisation
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue > C - Modelling
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue
11 Department of Materials and Earth Sciences
Zentrale Einrichtungen
Exzellenzinitiative
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres
DFG-Collaborative Research Centres (incl. Transregio)
Exzellenzinitiative > Graduate Schools > Graduate School of Computational Engineering (CE)
Exzellenzinitiative > Graduate Schools
Date Deposited: 28 Feb 2014 10:06
Official URL: http://dx.doi.org/10.1063/1.4866359
Additional Information:

SFB 595 Cooperation B7, C5, C6

Identification Number: doi:10.1063/1.4866359
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