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Physical properties and band structure of reactive molecular beam epitaxy grown oxygen engineered HfO[sub 2±x]

Hildebrandt, Erwin and Kurian, Jose and Alff, Lambert (2012):
Physical properties and band structure of reactive molecular beam epitaxy grown oxygen engineered HfO[sub 2±x].
In: Journal of Applied Physics, AIP Publishing LLC, p. 114112, 112, (11), ISSN 00218979,
[Online-Edition: http://dx.doi.org/10.1063/1.4767379],
[Article]

Abstract

We have conducted a detailed thin film growth structure of oxygen engineered monoclinic HfO2±x grown by reactive molecular beam epitaxy. The oxidation conditions induce a switching between (1¯11) and (002) texture of hafnium oxide. The band gap of oxygen deficient hafnia decreases with increasing amount of oxygen vacancies by more than 1 eV. For high oxygen vacancy concentrations, defect bands form inside the band gap that induce optical transitions and p-type conductivity. The resistivity changes by several orders of magnitude as a function of oxidation conditions. Oxygen vacancies do not give rise to ferromagnetic behavior.

Item Type: Article
Erschienen: 2012
Creators: Hildebrandt, Erwin and Kurian, Jose and Alff, Lambert
Title: Physical properties and band structure of reactive molecular beam epitaxy grown oxygen engineered HfO[sub 2±x]
Language: English
Abstract:

We have conducted a detailed thin film growth structure of oxygen engineered monoclinic HfO2±x grown by reactive molecular beam epitaxy. The oxidation conditions induce a switching between (1¯11) and (002) texture of hafnium oxide. The band gap of oxygen deficient hafnia decreases with increasing amount of oxygen vacancies by more than 1 eV. For high oxygen vacancy concentrations, defect bands form inside the band gap that induce optical transitions and p-type conductivity. The resistivity changes by several orders of magnitude as a function of oxidation conditions. Oxygen vacancies do not give rise to ferromagnetic behavior.

Journal or Publication Title: Journal of Applied Physics
Volume: 112
Number: 11
Publisher: AIP Publishing LLC
Uncontrolled Keywords: defect states, dielectric thin films, electrical conductivity, electrical resistivity, energy gap, epitaxial layers, hafnium compounds, molecular beam epitaxial growth, oxidation, texture, vacancies (crystal)
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Advanced Thin Film Technology
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences
Date Deposited: 07 Jan 2014 10:21
Official URL: http://dx.doi.org/10.1063/1.4767379
Identification Number: doi:10.1063/1.4767379
Funders: This work was supported by DFG through Grant No. AL 560/13-1 and the LOEWE-Centre AdRIA
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