TU Darmstadt / ULB / TUbiblio

Electrically Programmable Bistable Capacitor for High-Frequency Applications Based on Charge Storage at the (Ba,Sr)TiO3/Al2O3 Interface

Li, Shunyi ; Zheng, Yuliang ; Jakoby, Rolf ; Klein, Andreas (2012)
Electrically Programmable Bistable Capacitor for High-Frequency Applications Based on Charge Storage at the (Ba,Sr)TiO3/Al2O3 Interface.
In: Advanced Functional Materials, 22 (22)
doi: 10.1002/adfm.201200405
Artikel, Bibliographie

Kurzbeschreibung (Abstract)

Hysteresis is induced in paraelectric (Ba,Sr)TiO3 (BST) thin-film capacitors by inserting an Al2O3 barrier layer of a few nanometers in thickness between the BST layer and the electrode. The observed hysteresis is explained by ambipolar charge carrier injection through the Al2O3 layer and charge storage at the BST/Al2O3 interface. The magnitude of the hysteresis can be directly adjusted by manipulating the thickness ratio between BST and Al2O3. Taking into account the low loss of (Ba,Sr)TiO3 capacitors, the observed switching and retention characteristics are suitable for application as non-volatile programmable high-frequency devices, e.g., in radio-frequency identification.

Typ des Eintrags: Artikel
Erschienen: 2012
Autor(en): Li, Shunyi ; Zheng, Yuliang ; Jakoby, Rolf ; Klein, Andreas
Art des Eintrags: Bibliographie
Titel: Electrically Programmable Bistable Capacitor for High-Frequency Applications Based on Charge Storage at the (Ba,Sr)TiO3/Al2O3 Interface
Sprache: Englisch
Publikationsjahr: 21 November 2012
Verlag: WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Titel der Zeitschrift, Zeitung oder Schriftenreihe: Advanced Functional Materials
Jahrgang/Volume einer Zeitschrift: 22
(Heft-)Nummer: 22
DOI: 10.1002/adfm.201200405
Kurzbeschreibung (Abstract):

Hysteresis is induced in paraelectric (Ba,Sr)TiO3 (BST) thin-film capacitors by inserting an Al2O3 barrier layer of a few nanometers in thickness between the BST layer and the electrode. The observed hysteresis is explained by ambipolar charge carrier injection through the Al2O3 layer and charge storage at the BST/Al2O3 interface. The magnitude of the hysteresis can be directly adjusted by manipulating the thickness ratio between BST and Al2O3. Taking into account the low loss of (Ba,Sr)TiO3 capacitors, the observed switching and retention characteristics are suitable for application as non-volatile programmable high-frequency devices, e.g., in radio-frequency identification.

Freie Schlagworte: (Ba;Sr)TiO3,, steresis, interface charge, non-volatile, tunable high-frequency component
Fachbereich(e)/-gebiet(e): 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Oberflächenforschung
11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft
11 Fachbereich Material- und Geowissenschaften
Hinterlegungsdatum: 29 Nov 2013 08:51
Letzte Änderung: 26 Mär 2015 20:03
PPN:
Sponsoren: This work was supported by the German Science Foundation (DFG) in the framework of the Research Training Group (GRK 1037) on Tunable Integrated Components for Microwaves and Optics, TICMO.
Export:
Suche nach Titel in: TUfind oder in Google
Frage zum Eintrag Frage zum Eintrag

Optionen (nur für Redakteure)
Redaktionelle Details anzeigen Redaktionelle Details anzeigen