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p-Type Doping of Spiro-MeOTAD with WO3 and the Spiro-MeOTAD/WO3 Interface Investigated by Synchrotron-Induced Photoelectron Spectroscopy

Hock, René and Mayer, Thomas and Jaegermann, Wolfram (2012):
p-Type Doping of Spiro-MeOTAD with WO3 and the Spiro-MeOTAD/WO3 Interface Investigated by Synchrotron-Induced Photoelectron Spectroscopy.
116, In: The Journal of Physical Chemistry C, (34), ACS Publications, pp. 18146-18154, ISSN 1932-7447, [Online-Edition: http://dx.doi.org/10.1021/jp301179v],
[Article]

Abstract

p-Doping of the organic hole conductor Spiro-MeOTAD with tungsten oxide (WO3) is investigated by synchrotron-induced photoelectron spectroscopy (SXPS). Similar valence band spectra and electronic-state energies are shown for Spiro-MeOTAD films evaporated in UHV and prepared by drop-casting from cyclohexanone solution. In coevaporated Spiro-MeOTAD:WO3 films with varying amounts of WO3, a maximum shift of the HOMO binding energy by 0.98 eV toward the Fermi level is found. Similar shifts are induced in Spiro-MeOTAD at interfaces of Spiro-MeOTAD on WO3 and WO3 on Spiro-MeOTAD. In addition, interface dipole potentials of 0.87 and 1.36 eV, respectively, are induced in the two deposition sequences. The exchanged charge appears as a reduced W5+ component in W4f core orbital and additional W5d gap-state emissions. A correlation of the interface charge transfer to the doping mechanism is discussed.

Item Type: Article
Erschienen: 2012
Creators: Hock, René and Mayer, Thomas and Jaegermann, Wolfram
Title: p-Type Doping of Spiro-MeOTAD with WO3 and the Spiro-MeOTAD/WO3 Interface Investigated by Synchrotron-Induced Photoelectron Spectroscopy
Language: English
Abstract:

p-Doping of the organic hole conductor Spiro-MeOTAD with tungsten oxide (WO3) is investigated by synchrotron-induced photoelectron spectroscopy (SXPS). Similar valence band spectra and electronic-state energies are shown for Spiro-MeOTAD films evaporated in UHV and prepared by drop-casting from cyclohexanone solution. In coevaporated Spiro-MeOTAD:WO3 films with varying amounts of WO3, a maximum shift of the HOMO binding energy by 0.98 eV toward the Fermi level is found. Similar shifts are induced in Spiro-MeOTAD at interfaces of Spiro-MeOTAD on WO3 and WO3 on Spiro-MeOTAD. In addition, interface dipole potentials of 0.87 and 1.36 eV, respectively, are induced in the two deposition sequences. The exchanged charge appears as a reduced W5+ component in W4f core orbital and additional W5d gap-state emissions. A correlation of the interface charge transfer to the doping mechanism is discussed.

Journal or Publication Title: The Journal of Physical Chemistry C
Volume: 116
Number: 34
Publisher: ACS Publications
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Surface Science
Zentrale Einrichtungen
Exzellenzinitiative > Clusters of Excellence > Center of Smart Interfaces (CSI)
Exzellenzinitiative
Exzellenzinitiative > Clusters of Excellence
Date Deposited: 26 Nov 2013 12:18
Official URL: http://dx.doi.org/10.1021/jp301179v
Identification Number: doi:10.1021/jp301179v
Funders: We acknowledge our cooperation partner BASF within the OPEG 2010 project funded by the BMBF within the organic photovoltaic initiative.
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