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XPS characterization and photoelectrochemical behaviour of p-type 3C-SiC films on p-Si substrates for solar water splitting

Ma, Quan-Bao and Kaiser, Bernhard and Ziegler, Jürgen and Fertig, Dominic and Jaegermann, Wolfram (2012):
XPS characterization and photoelectrochemical behaviour of p-type 3C-SiC films on p-Si substrates for solar water splitting.
In: Journal of Physics D: Applied Physics, IOP Publishing, p. 325101, 45, (32), ISSN 0022-3727, [Online-Edition: http://dx.doi.org/10.1088/0022-3727/45/32/325101],
[Article]

Abstract

The electrochemical (EC) properties of single-crystalline p-type 3C-SiC films on p-Si substrates were investigated as electrodes in H2SO4 aqueous solutions in dark and under white light illumination. Before EC tests, the SiC films were etched by HF solution and aqua-regia–HF solution, respectively, and then investigated by x-ray photoelectron spectroscopy (XPS) including one untreated SiC sample. After EC tests, XPS was also applied to investigate the surface chemical state changes. The EC measurements indicate that the p-type 3C-SiC films on p-Si substrates can generate a cathodic photocurrent as the photocathode, which corresponds to hydrogen production, and generate an anodic photocurrent as the photoanode, which corresponds to oxygen evolution. XPS shows the surface of all the SiC films was oxidized due to anodic oxidation applied by a positive bias during the EC test, which indicates the formation of silicon oxides, CO2 or CO and carbonates.

Item Type: Article
Erschienen: 2012
Creators: Ma, Quan-Bao and Kaiser, Bernhard and Ziegler, Jürgen and Fertig, Dominic and Jaegermann, Wolfram
Title: XPS characterization and photoelectrochemical behaviour of p-type 3C-SiC films on p-Si substrates for solar water splitting
Language: English
Abstract:

The electrochemical (EC) properties of single-crystalline p-type 3C-SiC films on p-Si substrates were investigated as electrodes in H2SO4 aqueous solutions in dark and under white light illumination. Before EC tests, the SiC films were etched by HF solution and aqua-regia–HF solution, respectively, and then investigated by x-ray photoelectron spectroscopy (XPS) including one untreated SiC sample. After EC tests, XPS was also applied to investigate the surface chemical state changes. The EC measurements indicate that the p-type 3C-SiC films on p-Si substrates can generate a cathodic photocurrent as the photocathode, which corresponds to hydrogen production, and generate an anodic photocurrent as the photoanode, which corresponds to oxygen evolution. XPS shows the surface of all the SiC films was oxidized due to anodic oxidation applied by a positive bias during the EC test, which indicates the formation of silicon oxides, CO2 or CO and carbonates.

Journal or Publication Title: Journal of Physics D: Applied Physics
Volume: 45
Number: 32
Publisher: IOP Publishing
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Surface Science
Zentrale Einrichtungen
Exzellenzinitiative > Clusters of Excellence > Center of Smart Interfaces (CSI)
Exzellenzinitiative
Exzellenzinitiative > Clusters of Excellence
Date Deposited: 25 Nov 2013 09:31
Official URL: http://dx.doi.org/10.1088/0022-3727/45/32/325101
Identification Number: doi:10.1088/0022-3727/45/32/325101
Funders: The authors gratefully acknowledge the financial support of this work by the BMBF Foundation of Germany, and the authors also acknowledge the donation of single-crystalline 3C-SiC samples by the Leibniz Institute for Crystal Growth, Berlin.
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