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Surface electronic properties of polycrystalline bulk and thin film In2O3(ZnO)k compounds

Hopper, E. Mitchell and Zhu, Qimin and Gassmann, Jürgen and Klein, Andreas and Mason, Thomas O. (2013):
Surface electronic properties of polycrystalline bulk and thin film In2O3(ZnO)k compounds.
In: Applied Surface Science, pp. 811-815, 264, ISSN 01694332, [Online-Edition: http://dx.doi.org/10.1016/j.apsusc.2012.10.143],
[Article]

Abstract

The surface electronic potentials of In2O3(ZnO)k compounds were measured by X-ray and ultraviolet photoelectron spectroscopy. Both thin film (k = 2) and bulk specimens (k = 3, 5, 7, 9) were studied. All bulk specimens exhibited In enrichment at the surface. All samples showed an increase of In core level binding energies compared to pure and Sn-doped In2O3. The work functions and Fermi levels spanned a range similar to those of the basis oxides In2O3 and ZnO, and the ionization potential was similar to that of both In2O3 and ZnO processed under similar conditions (7.7 eV). This ionization potential was independent of both composition and post-deposition oxidation and reduction treatments. Kelvin probe measurements of cleaned and UV-ozone treated specimens under ambient conditions were in agreement with the photoelectron spectroscopy measurements.

Item Type: Article
Erschienen: 2013
Creators: Hopper, E. Mitchell and Zhu, Qimin and Gassmann, Jürgen and Klein, Andreas and Mason, Thomas O.
Title: Surface electronic properties of polycrystalline bulk and thin film In2O3(ZnO)k compounds
Language: English
Abstract:

The surface electronic potentials of In2O3(ZnO)k compounds were measured by X-ray and ultraviolet photoelectron spectroscopy. Both thin film (k = 2) and bulk specimens (k = 3, 5, 7, 9) were studied. All bulk specimens exhibited In enrichment at the surface. All samples showed an increase of In core level binding energies compared to pure and Sn-doped In2O3. The work functions and Fermi levels spanned a range similar to those of the basis oxides In2O3 and ZnO, and the ionization potential was similar to that of both In2O3 and ZnO processed under similar conditions (7.7 eV). This ionization potential was independent of both composition and post-deposition oxidation and reduction treatments. Kelvin probe measurements of cleaned and UV-ozone treated specimens under ambient conditions were in agreement with the photoelectron spectroscopy measurements.

Journal or Publication Title: Applied Surface Science
Volume: 264
Uncontrolled Keywords: Indium zinc oxide; Photoelectron spectroscopy; Kelvin probe; Ionization potential; Work function
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Surface Science
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue > D - Component properties > Subproject D3: Function and fatigue of oxide electrodes in organic light emitting diodes
11 Department of Materials and Earth Sciences > Material Science
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue > D - Component properties
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue
11 Department of Materials and Earth Sciences
Zentrale Einrichtungen
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres
DFG-Collaborative Research Centres (incl. Transregio)
Date Deposited: 16 Aug 2013 13:09
Official URL: http://dx.doi.org/10.1016/j.apsusc.2012.10.143
Additional Information:

SFB 595 D3

Identification Number: doi:10.1016/j.apsusc.2012.10.143
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