Hopper, E. Mitchell ; Zhu, Qimin ; Gassmann, Jürgen ; Klein, Andreas ; Mason, Thomas O. (2013)
Surface electronic properties of polycrystalline bulk and thin film In2O3(ZnO)k compounds.
In: Applied Surface Science, 264
doi: 10.1016/j.apsusc.2012.https://doi.org/10.143
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
The surface electronic potentials of In2O3(ZnO)k compounds were measured by X-ray and ultraviolet photoelectron spectroscopy. Both thin film (k = 2) and bulk specimens (k = 3, 5, 7, 9) were studied. All bulk specimens exhibited In enrichment at the surface. All samples showed an increase of In core level binding energies compared to pure and Sn-doped In2O3. The work functions and Fermi levels spanned a range similar to those of the basis oxides In2O3 and ZnO, and the ionization potential was similar to that of both In2O3 and ZnO processed under similar conditions (7.7 eV). This ionization potential was independent of both composition and post-deposition oxidation and reduction treatments. Kelvin probe measurements of cleaned and UV-ozone treated specimens under ambient conditions were in agreement with the photoelectron spectroscopy measurements.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2013 |
| Autor(en): | Hopper, E. Mitchell ; Zhu, Qimin ; Gassmann, Jürgen ; Klein, Andreas ; Mason, Thomas O. |
| Art des Eintrags: | Bibliographie |
| Titel: | Surface electronic properties of polycrystalline bulk and thin film In2O3(ZnO)k compounds |
| Sprache: | Englisch |
| Publikationsjahr: | 1 Januar 2013 |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Applied Surface Science |
| Jahrgang/Volume einer Zeitschrift: | 264 |
| DOI: | 10.1016/j.apsusc.2012.https://doi.org/10.143 |
| Kurzbeschreibung (Abstract): | The surface electronic potentials of In2O3(ZnO)k compounds were measured by X-ray and ultraviolet photoelectron spectroscopy. Both thin film (k = 2) and bulk specimens (k = 3, 5, 7, 9) were studied. All bulk specimens exhibited In enrichment at the surface. All samples showed an increase of In core level binding energies compared to pure and Sn-doped In2O3. The work functions and Fermi levels spanned a range similar to those of the basis oxides In2O3 and ZnO, and the ionization potential was similar to that of both In2O3 and ZnO processed under similar conditions (7.7 eV). This ionization potential was independent of both composition and post-deposition oxidation and reduction treatments. Kelvin probe measurements of cleaned and UV-ozone treated specimens under ambient conditions were in agreement with the photoelectron spectroscopy measurements. |
| Freie Schlagworte: | Indium zinc oxide; Photoelectron spectroscopy; Kelvin probe; Ionization potential; Work function |
| Zusätzliche Informationen: | SFB 595 D3 |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Oberflächenforschung DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche > SFB 595: Elektrische Ermüdung > D - Bauteileigenschaften > Teilprojekt D3: Funktion und Ermüdung oxidischer Elektroden in organischen Leuchtdioden 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche > SFB 595: Elektrische Ermüdung > D - Bauteileigenschaften DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche > SFB 595: Elektrische Ermüdung 11 Fachbereich Material- und Geowissenschaften Zentrale Einrichtungen DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche DFG-Sonderforschungsbereiche (inkl. Transregio) |
| Hinterlegungsdatum: | 16 Aug 2013 13:09 |
| Letzte Änderung: | 28 Mär 2015 16:44 |
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