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Synthesis, Characterization, Electronic and Gas-Sensing Properties towards H2and CO of Transparent, Large-Area, Low-Layer Graphene

Kayhan, Emine and Prasad, Ravi Mohan and Gurlo, Alexander and Yilmazoglu, Oktay and Engstler, Jörg and Ionescu, Emanuel and Yoon, Songhak and Weidenkaff, Anke and Schneider, Jörg J. (2012):
Synthesis, Characterization, Electronic and Gas-Sensing Properties towards H2and CO of Transparent, Large-Area, Low-Layer Graphene.
In: Chemistry - A European Journal, Wiley, pp. 14996-15003, 18, (47), ISSN 09476539, [Online-Edition: http://dx.doi.org/10.1002/chem.201201880],
[Article]

Abstract

Low-layered, transparent graphene is accessible by a chemical vapor deposition (CVD) technique on a Ni-catalyst layer, which is deposited on a <100> silicon substrate. The number of graphene layers on the substrate is controlled by the grain boundaries in the Ni-catalyst layer and can be studied by micro Raman analysis. Electrical studies showed a sheet resistance (Rsheet) of approximately 1435 Ω per □, a contact resistance (Rc) of about 127 Ω, and a specific contact resistance (Rsc) of approximately 2.8×10−4 Ω cm2 for the CVD graphene samples. Transistor output characteristics for the graphene sample demonstrated linear current/voltage behavior. A current versus voltage (Ids–Vds) plot clearly indicates a p-conducting characteristic of the synthesized graphene. Gas-sensor measurements revealed a high sensor activity of the low-layer graphene material towards H2 and CO. At 300 °C, a sensor response of approximately 29 towards low H2 concentrations (1 vol %) was observed, which is by a factor of four higher than recently reported.

Item Type: Article
Erschienen: 2012
Creators: Kayhan, Emine and Prasad, Ravi Mohan and Gurlo, Alexander and Yilmazoglu, Oktay and Engstler, Jörg and Ionescu, Emanuel and Yoon, Songhak and Weidenkaff, Anke and Schneider, Jörg J.
Title: Synthesis, Characterization, Electronic and Gas-Sensing Properties towards H2and CO of Transparent, Large-Area, Low-Layer Graphene
Language: English
Abstract:

Low-layered, transparent graphene is accessible by a chemical vapor deposition (CVD) technique on a Ni-catalyst layer, which is deposited on a <100> silicon substrate. The number of graphene layers on the substrate is controlled by the grain boundaries in the Ni-catalyst layer and can be studied by micro Raman analysis. Electrical studies showed a sheet resistance (Rsheet) of approximately 1435 Ω per □, a contact resistance (Rc) of about 127 Ω, and a specific contact resistance (Rsc) of approximately 2.8×10−4 Ω cm2 for the CVD graphene samples. Transistor output characteristics for the graphene sample demonstrated linear current/voltage behavior. A current versus voltage (Ids–Vds) plot clearly indicates a p-conducting characteristic of the synthesized graphene. Gas-sensor measurements revealed a high sensor activity of the low-layer graphene material towards H2 and CO. At 300 °C, a sensor response of approximately 29 towards low H2 concentrations (1 vol %) was observed, which is by a factor of four higher than recently reported.

Journal or Publication Title: Chemistry - A European Journal
Volume: 18
Number: 47
Publisher: Wiley
Uncontrolled Keywords: chemical vapor deposition electrical properties, graphene, Raman spectroscopy, sensors
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Dispersive Solids
07 Department of Chemistry > Fachgebiet Anorganische Chemie
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences
07 Department of Chemistry
Date Deposited: 21 Mar 2013 08:15
Official URL: http://dx.doi.org/10.1002/chem.201201880
Additional Information:

Dedicated to Professor Dr. Dieter Fenske on the occasion of his 70th birthday.

Identification Number: doi:10.1002/chem.201201880
Funders: TEM measurements were performed at the Ernst-Ruska-Zentrum für Elektronenmikroskopie (ER-C), Jülich, Germany, under the cooperative research program ERC-TUD 01
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