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Synthesis, Characterization, Electronic and Gas-Sensing Properties towards H2and CO of Transparent, Large-Area, Low-Layer Graphene

Kayhan, Emine ; Prasad, Ravi Mohan ; Gurlo, Alexander ; Yilmazoglu, Oktay ; Engstler, Jörg ; Ionescu, Emanuel ; Yoon, Songhak ; Weidenkaff, Anke ; Schneider, Jörg J. (2012):
Synthesis, Characterization, Electronic and Gas-Sensing Properties towards H2and CO of Transparent, Large-Area, Low-Layer Graphene.
18, In: Chemistry - A European Journal, 2012 (47), pp. 14996-15003. Wiley, ISSN 09476539,
[Article]

Abstract

Low-layered, transparent graphene is accessible by a chemical vapor deposition (CVD) technique on a Ni-catalyst layer, which is deposited on a <100> silicon substrate. The number of graphene layers on the substrate is controlled by the grain boundaries in the Ni-catalyst layer and can be studied by micro Raman analysis. Electrical studies showed a sheet resistance (Rsheet) of approximately 1435 Ω per □, a contact resistance (Rc) of about 127 Ω, and a specific contact resistance (Rsc) of approximately 2.8×10−4 Ω cm2 for the CVD graphene samples. Transistor output characteristics for the graphene sample demonstrated linear current/voltage behavior. A current versus voltage (Ids–Vds) plot clearly indicates a p-conducting characteristic of the synthesized graphene. Gas-sensor measurements revealed a high sensor activity of the low-layer graphene material towards H2 and CO. At 300 °C, a sensor response of approximately 29 towards low H2 concentrations (1 vol %) was observed, which is by a factor of four higher than recently reported.

Item Type: Article
Erschienen: 2012
Creators: Kayhan, Emine ; Prasad, Ravi Mohan ; Gurlo, Alexander ; Yilmazoglu, Oktay ; Engstler, Jörg ; Ionescu, Emanuel ; Yoon, Songhak ; Weidenkaff, Anke ; Schneider, Jörg J.
Title: Synthesis, Characterization, Electronic and Gas-Sensing Properties towards H2and CO of Transparent, Large-Area, Low-Layer Graphene
Language: English
Abstract:

Low-layered, transparent graphene is accessible by a chemical vapor deposition (CVD) technique on a Ni-catalyst layer, which is deposited on a <100> silicon substrate. The number of graphene layers on the substrate is controlled by the grain boundaries in the Ni-catalyst layer and can be studied by micro Raman analysis. Electrical studies showed a sheet resistance (Rsheet) of approximately 1435 Ω per □, a contact resistance (Rc) of about 127 Ω, and a specific contact resistance (Rsc) of approximately 2.8×10−4 Ω cm2 for the CVD graphene samples. Transistor output characteristics for the graphene sample demonstrated linear current/voltage behavior. A current versus voltage (Ids–Vds) plot clearly indicates a p-conducting characteristic of the synthesized graphene. Gas-sensor measurements revealed a high sensor activity of the low-layer graphene material towards H2 and CO. At 300 °C, a sensor response of approximately 29 towards low H2 concentrations (1 vol %) was observed, which is by a factor of four higher than recently reported.

Journal or Publication Title: Chemistry - A European Journal
Volume: 18
Journal volume: 2012
Number: 47
Publisher: Wiley
Uncontrolled Keywords: chemical vapor deposition electrical properties, graphene, Raman spectroscopy, sensors
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Dispersive Solids
07 Department of Chemistry
07 Department of Chemistry > Fachgebiet Anorganische Chemie
Date Deposited: 21 Mar 2013 08:15
Official URL: http://dx.doi.org/10.1002/chem.201201880
Additional Information:

Dedicated to Professor Dr. Dieter Fenske on the occasion of his 70th birthday.

Identification Number: doi:10.1002/chem.201201880
Funders: TEM measurements were performed at the Ernst-Ruska-Zentrum für Elektronenmikroskopie (ER-C), Jülich, Germany, under the cooperative research program ERC-TUD 01
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