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Characterization of tellurium layers for back contact formation on close to technology treated CdTe surfaces

Kraft, D. and Thissen, A. and Broetz, J. and Flege, S. and Campo, M. and Klein, Andreas and Jaegermann, W. (2003):
Characterization of tellurium layers for back contact formation on close to technology treated CdTe surfaces.
In: Journal of Applied Physics, AIP, pp. 3589-3598, 94, (5), ISSN 00218979, [Online-Edition: http://dx.doi.org/10.1063/1.1597757],
[Article]

Abstract

We have studied the contact formation on CdTe surfaces following the technologically applied procedure. The electronic properties of wet chemically etched CdTe surfaces has been investigated with photoelectron spectroscopy. For the characterization of the morphology, structure, and elemental distribution in the etched layer atomic force microscopy, scanning electron microscopy, grazing incidence x-ray diffraction, and secondary ion mass spectroscopy have been used. Etching of the samples has been performed in air and in an electrochemistry chamber directly attached to the UHV system. In both cases the formation of an elemental polycrystalline Te layer with a thickness of about 80 Å is detected. For comparison, a thin Te layer has been deposited by physical vapor deposition onto a CdTe substrate. We determine a valence-band offset of ΔEVB=0.5±0.1 eV, independent of the preparation of the interface.

Item Type: Article
Erschienen: 2003
Creators: Kraft, D. and Thissen, A. and Broetz, J. and Flege, S. and Campo, M. and Klein, Andreas and Jaegermann, W.
Title: Characterization of tellurium layers for back contact formation on close to technology treated CdTe surfaces
Language: English
Abstract:

We have studied the contact formation on CdTe surfaces following the technologically applied procedure. The electronic properties of wet chemically etched CdTe surfaces has been investigated with photoelectron spectroscopy. For the characterization of the morphology, structure, and elemental distribution in the etched layer atomic force microscopy, scanning electron microscopy, grazing incidence x-ray diffraction, and secondary ion mass spectroscopy have been used. Etching of the samples has been performed in air and in an electrochemistry chamber directly attached to the UHV system. In both cases the formation of an elemental polycrystalline Te layer with a thickness of about 80 Å is detected. For comparison, a thin Te layer has been deposited by physical vapor deposition onto a CdTe substrate. We determine a valence-band offset of ΔEVB=0.5±0.1 eV, independent of the preparation of the interface.

Journal or Publication Title: Journal of Applied Physics
Volume: 94
Number: 5
Publisher: AIP
Uncontrolled Keywords: II-VI semiconductors, cadmium compounds, etching, photoelectron spectra, atomic force microscopy, scanning electron microscopy, X-ray diffraction, secondary ion mass spectra, valence bands, surface morphology
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Material Analytics
11 Department of Materials and Earth Sciences > Material Science > Surface Science
11 Department of Materials and Earth Sciences > Material Science > Structure Research
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences
Date Deposited: 06 Sep 2012 08:17
Official URL: http://dx.doi.org/10.1063/1.1597757
Identification Number: doi:10.1063/1.1597757
Funders: This work was supported by the Bundesministerium für Wirtschaft (BmWi), Grant No. 0329857., The authors would like to thank ANTEC Technology GmbH for the intensive discussions, insights into the production process of CdTe solar cells, and delivery of CdTe samples., They also would like to thank Patrick Hoffmann, Ricardo Mikalo, David Batchelor, and Dieter Schmeisser from the BTU Cottbus for their support during our beamtime at the undulator/monochromator U49/2 PGM2 at BESSY II in Berlin.
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