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Comparison of thermally and mechanically induced Si layer transfer in hydrogen-implanted Si wafers

Höchbauer, T. and Misra, A. and Nastasi, M. and Henttinen, K. and Suni, T. and Suni, I. and Lau, S. S. and Ensinger, W. (2004):
Comparison of thermally and mechanically induced Si layer transfer in hydrogen-implanted Si wafers.
216, In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, pp. 257-263, ISSN 0168583X, [Online-Edition: http://dx.doi.org/10.1016/j.nimb.2003.11.043],
[Article]

Abstract

Hydrogen ion-implantation into Si and subsequent heat treatment has been shown to be an effective means of cleaving thin layer of Si from its parent wafer. This process has been called Smart CutTM or ion-cut. We investigated the cleavage process in H-implanted silicon samples, in which the ion-cut was provoked thermally and mechanically, respectively. A 〈1 0 0〉 oriented p-type silicon wafer was irradiated at room temperature with 100 keV H2+-ions to a dose of 5 × 1016 H2/cm2 and subsequently joined to a handle wafer. Ion-cutting was achieved by two different methods: (1) thermally by annealing to 350 °C and (2) mechanically by insertion of a razor blade sidewise into the bonded wafers near the bond interface. The H-concentration and the crystal damage depth profiles before and after the ion-cut were investigated through the combined use of elastic recoil detection analysis and Rutherford backscattering spectroscopy (RBS). The location at which the ion-cut occurred was determined by RBS in channeling mode and cross-section transmission electron spectroscopy. The ion-cut depth was found to be independent on the cutting method. The gained knowledge was correlated to the depth distribution of the H-platelet density in the as-implanted sample, which contains two separate peaks in the implantation zone. The obtained results suggest that the ion-cut location coincides with the depth of the H-platelet density peak located at a larger depth.

Item Type: Article
Erschienen: 2004
Creators: Höchbauer, T. and Misra, A. and Nastasi, M. and Henttinen, K. and Suni, T. and Suni, I. and Lau, S. S. and Ensinger, W.
Title: Comparison of thermally and mechanically induced Si layer transfer in hydrogen-implanted Si wafers
Language: English
Abstract:

Hydrogen ion-implantation into Si and subsequent heat treatment has been shown to be an effective means of cleaving thin layer of Si from its parent wafer. This process has been called Smart CutTM or ion-cut. We investigated the cleavage process in H-implanted silicon samples, in which the ion-cut was provoked thermally and mechanically, respectively. A 〈1 0 0〉 oriented p-type silicon wafer was irradiated at room temperature with 100 keV H2+-ions to a dose of 5 × 1016 H2/cm2 and subsequently joined to a handle wafer. Ion-cutting was achieved by two different methods: (1) thermally by annealing to 350 °C and (2) mechanically by insertion of a razor blade sidewise into the bonded wafers near the bond interface. The H-concentration and the crystal damage depth profiles before and after the ion-cut were investigated through the combined use of elastic recoil detection analysis and Rutherford backscattering spectroscopy (RBS). The location at which the ion-cut occurred was determined by RBS in channeling mode and cross-section transmission electron spectroscopy. The ion-cut depth was found to be independent on the cutting method. The gained knowledge was correlated to the depth distribution of the H-platelet density in the as-implanted sample, which contains two separate peaks in the implantation zone. The obtained results suggest that the ion-cut location coincides with the depth of the H-platelet density peak located at a larger depth.

Journal or Publication Title: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Volume: 216
Publisher: Elsevier
Uncontrolled Keywords: Ion-cut, Implantation, Fracture mechanics, Silicon on insulator
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Material Analytics
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences
Date Deposited: 06 Sep 2012 08:00
Official URL: http://dx.doi.org/10.1016/j.nimb.2003.11.043
Identification Number: doi:10.1016/j.nimb.2003.11.043
Funders: This work was sponsored by the US Department of Energy, Office of Basic Energy Sciences, Division of Material Sciences., One of the authors (J.W.M.) was sponsored in part by the National Science Foundation., We are grateful for the technical assistance from Caleb Evans, Chris Wetteland and Joseph Tesmer during the course of this work.
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