Kiuchi, Masato ; Matsumoto, Takashi ; Yoshikawa, Takafumi ; Goto, Seiichi ; Ensinger, Wolfgang (2000)
Crystallization in low-energy deposition of titanium ions.
In: Colloids and Surfaces B: Biointerfaces, 19 (3)
doi: 10.1016/S0927-7765(00)00165-X
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
To investigate crystallization in the ion beam deposition process, titanium ions were deposited on silicon wafers at 105 and 55 eV. As titanium is an active metal, titanium compounds are formed by absorbing backfilled or residual gas. At energy levels of 105 or 55 eV, titanium crystallizes in a NaCl-type titanium compound with the backfilling of air. In all samples, (110)-oriented crystals grew with a rectangular lattice arrangement of titanium atoms. The open channel 〈110〉 of preferentially oriented crystal growth was parallel to the direction of incident ions normal to the substrate surface.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2000 |
| Autor(en): | Kiuchi, Masato ; Matsumoto, Takashi ; Yoshikawa, Takafumi ; Goto, Seiichi ; Ensinger, Wolfgang |
| Art des Eintrags: | Bibliographie |
| Titel: | Crystallization in low-energy deposition of titanium ions |
| Sprache: | Englisch |
| Publikationsjahr: | 30 Dezember 2000 |
| Verlag: | Elsevier |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Colloids and Surfaces B: Biointerfaces |
| Jahrgang/Volume einer Zeitschrift: | 19 |
| (Heft-)Nummer: | 3 |
| DOI: | 10.1016/S0927-7765(00)00165-X |
| Kurzbeschreibung (Abstract): | To investigate crystallization in the ion beam deposition process, titanium ions were deposited on silicon wafers at 105 and 55 eV. As titanium is an active metal, titanium compounds are formed by absorbing backfilled or residual gas. At energy levels of 105 or 55 eV, titanium crystallizes in a NaCl-type titanium compound with the backfilling of air. In all samples, (110)-oriented crystals grew with a rectangular lattice arrangement of titanium atoms. The open channel 〈110〉 of preferentially oriented crystal growth was parallel to the direction of incident ions normal to the substrate surface. |
| Freie Schlagworte: | Crystallization, Ion beam deposition, Preferred orientation, Titanium |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Materialanalytik 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften |
| Hinterlegungsdatum: | 25 Jun 2012 10:58 |
| Letzte Änderung: | 05 Mär 2013 10:01 |
| PPN: | |
| Export: | |
| Suche nach Titel in: | TUfind oder in Google |
 |
Frage zum Eintrag |
Optionen (nur für Redakteure)
 |
Redaktionelle Details anzeigen |
Drucken
Impressum