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Silicoboron–carbonitride ceramics: A class of high-temperature, dopable electronic materials

Ramakrishnan, P. A. ; Wang, Y. T. ; Balzar, D. ; An, Linan ; Haluschka, C. ; Riedel, R. ; Hermann, A. M. (2001):
Silicoboron–carbonitride ceramics: A class of high-temperature, dopable electronic materials.
In: Applied Physics Letters, 78 (20), pp. 3076-3078. AIP, ISSN 00036951,
[Article]

Abstract

The structure and electronic properties of polymer-derived silicoboron–carbonitride ceramics are reported. Structural analysis using radial-distribution-function formalism showed that the local structure is comprised of Si tetrahedra with B, C, and N at the corners. Boron doping of SiCN leads to enhanced p-type conductivity (0.1 –1 cm–1 at room temperature). The conductivity variation with temperature for both SiCN and SiBCN ceramics shows Mott's variable range hopping behavior in these materials, characteristic of a highly defective semiconductor. The SiBCN ceramic has a low, positive value of thermopower, which is probably due to a compensation mechanism.

Item Type: Article
Erschienen: 2001
Creators: Ramakrishnan, P. A. ; Wang, Y. T. ; Balzar, D. ; An, Linan ; Haluschka, C. ; Riedel, R. ; Hermann, A. M.
Title: Silicoboron–carbonitride ceramics: A class of high-temperature, dopable electronic materials
Language: English
Abstract:

The structure and electronic properties of polymer-derived silicoboron–carbonitride ceramics are reported. Structural analysis using radial-distribution-function formalism showed that the local structure is comprised of Si tetrahedra with B, C, and N at the corners. Boron doping of SiCN leads to enhanced p-type conductivity (0.1 –1 cm–1 at room temperature). The conductivity variation with temperature for both SiCN and SiBCN ceramics shows Mott's variable range hopping behavior in these materials, characteristic of a highly defective semiconductor. The SiBCN ceramic has a low, positive value of thermopower, which is probably due to a compensation mechanism.

Journal or Publication Title: Applied Physics Letters
Journal volume: 78
Number: 20
Publisher: AIP
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Dispersive Solids
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences
Date Deposited: 18 May 2012 08:19
Official URL: http://dx.doi.org/10.1063/1.1370540
Identification Number: doi:10.1063/1.1370540
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