Oprea, A. ; Gurlo, A. ; Bârsan, N. ; Weimar, U. (2009)
Transport and gas sensing properties of In2O3 nanocrystalline thick films: A Hall effect based approach.
In: Sensors and Actuators B: Chemical, 139 (2)
doi: 10.1016/j.snb.2009.03.002
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
Undoped nanosized In2O3 with n-type conduction was produced in both polymorphic forms (cubic and rhombohedral) and deposited by screen-printing as thick films. These films show high sensitivity to low O3 concentration levels. They have been investigated by four point conductance and Hall effect measurements under sensor operating conditions (elevated temperature and ozone exposure). The effective values of the charge carrier concentration and mobility have been calculated from the experimental records using the recipe for the single crystals. The response to O3 is discussed in the frame of the standard models for gas sensors. The observed deviations from the model are explained in connection with the film crystalline structure and microscopic parameters spread.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2009 |
| Autor(en): | Oprea, A. ; Gurlo, A. ; Bârsan, N. ; Weimar, U. |
| Art des Eintrags: | Bibliographie |
| Titel: | Transport and gas sensing properties of In2O3 nanocrystalline thick films: A Hall effect based approach |
| Sprache: | Englisch |
| Publikationsjahr: | 4 Juni 2009 |
| Verlag: | Elsevier |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Sensors and Actuators B: Chemical |
| Jahrgang/Volume einer Zeitschrift: | 139 |
| (Heft-)Nummer: | 2 |
| DOI: | 10.1016/j.snb.2009.03.002 |
| Kurzbeschreibung (Abstract): | Undoped nanosized In2O3 with n-type conduction was produced in both polymorphic forms (cubic and rhombohedral) and deposited by screen-printing as thick films. These films show high sensitivity to low O3 concentration levels. They have been investigated by four point conductance and Hall effect measurements under sensor operating conditions (elevated temperature and ozone exposure). The effective values of the charge carrier concentration and mobility have been calculated from the experimental records using the recipe for the single crystals. The response to O3 is discussed in the frame of the standard models for gas sensors. The observed deviations from the model are explained in connection with the film crystalline structure and microscopic parameters spread. |
| Freie Schlagworte: | In2O3, Mobility, Gas sensitivity |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Disperse Feststoffe 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften |
| Hinterlegungsdatum: | 12 Apr 2012 11:13 |
| Letzte Änderung: | 05 Mär 2013 10:00 |
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