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Controlled oxygen vacancy induced p-type conductivity in HfO2−x thin films

Hildebrandt, Erwin and Kurian, Jose and Müller, Mathis M. and Schroeder, Thomas and Kleebe, Hans-Joachim and Alff, Lambert (2011):
Controlled oxygen vacancy induced p-type conductivity in HfO2−x thin films.
In: Applied Physics Letters, pp. 112902-112904, 99, (11), ISSN 00036951, [Online-Edition: http://dx.doi.org/10.1063/1.3637603],
[Article]

Abstract

We have synthesized highly oxygen deficient HfO2−x thin films by controlled oxygen engineering using reactive molecular beam epitaxy. Above a threshold value of oxygen vacancies, p-type conductivity sets in with up to 6 times 1021 charge carriers per cm3. At the same time, the band-gap is reduced continuously by more than 1 eV. We suggest an oxygen vacancy induced p-type defect band as origin of the observed behavior.

Item Type: Article
Erschienen: 2011
Creators: Hildebrandt, Erwin and Kurian, Jose and Müller, Mathis M. and Schroeder, Thomas and Kleebe, Hans-Joachim and Alff, Lambert
Title: Controlled oxygen vacancy induced p-type conductivity in HfO2−x thin films
Language: English
Abstract:

We have synthesized highly oxygen deficient HfO2−x thin films by controlled oxygen engineering using reactive molecular beam epitaxy. Above a threshold value of oxygen vacancies, p-type conductivity sets in with up to 6 times 1021 charge carriers per cm3. At the same time, the band-gap is reduced continuously by more than 1 eV. We suggest an oxygen vacancy induced p-type defect band as origin of the observed behavior.

Journal or Publication Title: Applied Physics Letters
Volume: 99
Number: 11
Uncontrolled Keywords: conduction bands, defect states, electrical conductivity, energy gap, epitaxial layers, hafnium compounds, insulating thin films, molecular beam epitaxial growth, vacancies (crystal)
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Earth Science
11 Department of Materials and Earth Sciences > Earth Science > Geo-Material-Science
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Advanced Thin Film Technology
Date Deposited: 30 Mar 2012 10:48
Official URL: http://dx.doi.org/10.1063/1.3637603
Identification Number: doi:10.1063/1.3637603
Funders: LOEWE Centre of Excellence AdRIA
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