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Epitaxial growth of superconducting Eu2-xCexCuO4 thin films

Krockenberger, Yoshiharu ; Kurian, Jose ; Naito, Michio ; Alff, Lambert (2008)
Epitaxial growth of superconducting Eu2-xCexCuO4 thin films.
In: Japanese Journal of Applied Physics, 47 (8)
doi: 10.1143/JJAP.47.6307
Artikel, Bibliographie

Kurzbeschreibung (Abstract)

We have grown (00l)-oriented thin films of Eu2-xCexCuO4 on (001) SrTiO3 with cerium composition in the range 0≤x≤0.22 by reactive molecular beam epitaxy and characterized them by X-ray diffraction and transport measurements. A systematic change in the c-axis length upon cerium doping was observed indicating that single-phase films were obtained for the whole doping range up to the solubility limit at x=0.22. Superconductivity appeared within a cerium concentration of 0.14≤x≤0.19. Compared to other electron doped cuprates, the superconducting phase space and maximal critical temperature is reduced, and the point of optimal doping is shifted to a higher doping level.

Typ des Eintrags: Artikel
Erschienen: 2008
Autor(en): Krockenberger, Yoshiharu ; Kurian, Jose ; Naito, Michio ; Alff, Lambert
Art des Eintrags: Bibliographie
Titel: Epitaxial growth of superconducting Eu2-xCexCuO4 thin films
Sprache: Englisch
Publikationsjahr: 8 August 2008
Titel der Zeitschrift, Zeitung oder Schriftenreihe: Japanese Journal of Applied Physics
Jahrgang/Volume einer Zeitschrift: 47
(Heft-)Nummer: 8
DOI: 10.1143/JJAP.47.6307
Kurzbeschreibung (Abstract):

We have grown (00l)-oriented thin films of Eu2-xCexCuO4 on (001) SrTiO3 with cerium composition in the range 0≤x≤0.22 by reactive molecular beam epitaxy and characterized them by X-ray diffraction and transport measurements. A systematic change in the c-axis length upon cerium doping was observed indicating that single-phase films were obtained for the whole doping range up to the solubility limit at x=0.22. Superconductivity appeared within a cerium concentration of 0.14≤x≤0.19. Compared to other electron doped cuprates, the superconducting phase space and maximal critical temperature is reduced, and the point of optimal doping is shifted to a higher doping level.

Fachbereich(e)/-gebiet(e): 11 Fachbereich Material- und Geowissenschaften
11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft
11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Dünne Schichten
Hinterlegungsdatum: 29 Mär 2012 11:13
Letzte Änderung: 23 Jan 2024 09:03
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