TU Darmstadt / ULB / TUbiblio

Molecular dynamics study of defect formation in GaN cascades

Nord, J. and Nordlund, K. and Keinonen, J. and Albe, K. (2003):
Molecular dynamics study of defect formation in GaN cascades.
In: Nucl. Instr. Meth. B, Elsevier Science Publishing Company, pp. 93-99, 202, ISSN 0168-583X,
[Online-Edition: http://www.sciencedirect.com/science/article/pii/S0168583X02...],
[Article]

Abstract

Simulations of irradiation effects in compound semiconductors require interatomic potentials which describe not only the compound phases, but also the pure constituents and defects. We discuss a systematic approach based on the analytic bond-order scheme for constructing such potentials and give an example for GaN. Finally, this potential is employed for simulations of defect formation in GaN by ion irradiation for recoils in the 200 eV to 10 keV energy range. Results on the total damage production are presented and compared with other semiconductors and experiments. (C) 2002 Elsevier Science B.V. All rights reserved.

Item Type: Article
Erschienen: 2003
Creators: Nord, J. and Nordlund, K. and Keinonen, J. and Albe, K.
Title: Molecular dynamics study of defect formation in GaN cascades
Language: English
Abstract:

Simulations of irradiation effects in compound semiconductors require interatomic potentials which describe not only the compound phases, but also the pure constituents and defects. We discuss a systematic approach based on the analytic bond-order scheme for constructing such potentials and give an example for GaN. Finally, this potential is employed for simulations of defect formation in GaN by ion irradiation for recoils in the 200 eV to 10 keV energy range. Results on the total damage production are presented and compared with other semiconductors and experiments. (C) 2002 Elsevier Science B.V. All rights reserved.

Journal or Publication Title: Nucl. Instr. Meth. B
Volume: 202
Publisher: Elsevier Science Publishing Company
Uncontrolled Keywords: Irradiation. Defects, Semiconductors, GaN
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Materials Modelling
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences
Date Deposited: 22 Feb 2012 10:55
Official URL: http://www.sciencedirect.com/science/article/pii/S0168583X02...
Additional Information:

6th International Conference on Computer Simulation of Radiation Effects in Solids

Identification Number: doi:10.1016/S0168-583X(02)01839-6
Related URLs:
Funders: The research was supported by the Academy of Finland under project Nos. 44215 and 73722., Additional travel fundings of the DAAD and the Academy of Finland as well as Grants for computer time from the Center for Scientific Computing in Espoo, Finland are gratefully acknowledged.
Export:
Suche nach Titel in: TUfind oder in Google

Optionen (nur für Redakteure)

View Item View Item