Paul, F. and Giere, A. and Menesklou, W. and Binder, J. R. and Scheele, P. and Jakoby, Rolf and Haußelt, J. (2008):
Influence of Fe-F-co-doping on the dielectric properties of Ba0.6Sr0.4TiO3 thick-films.
In: International Journal of Materials Research, pp. 1119-1128, 99, [Article]
Abstract
The influence of Fe acceptor and Fe?F acceptor?donor co-doping on the dielectric response of screen-printed Ba0.6Sr0.4TiO3 thick-films on alumina substrates has been investigated. The Ba0.6Sr0.4TiO3 powders were synthesized by freeze-drying of sols. Permittivity dielectric loss, and tunability were investigated at kHz frequencies with a planar metal-insulator-metal capacitor structure, and at GHz frequencies up to 40 GHz using coplanar waveguide structures. Pure acceptor doping by Fe was found to have a distinct influence on permittivity and dielectric loss-factor at kHz-frequencies and at GHz frequencies due to an internal bias field and pairs of associated defects. Co-doping with F significantly suppresses the influence of the internal bias field and defect-associates at low and microwave frequencies. The commutation quality factor at 10 GHz and E eff
| Item Type: | Article |
|---|---|
| Erschienen: | 2008 |
| Creators: | Paul, F. and Giere, A. and Menesklou, W. and Binder, J. R. and Scheele, P. and Jakoby, Rolf and Haußelt, J. |
| Title: | Influence of Fe-F-co-doping on the dielectric properties of Ba0.6Sr0.4TiO3 thick-films |
| Language: | English |
| Abstract: | The influence of Fe acceptor and Fe?F acceptor?donor co-doping on the dielectric response of screen-printed Ba0.6Sr0.4TiO3 thick-films on alumina substrates has been investigated. The Ba0.6Sr0.4TiO3 powders were synthesized by freeze-drying of sols. Permittivity dielectric loss, and tunability were investigated at kHz frequencies with a planar metal-insulator-metal capacitor structure, and at GHz frequencies up to 40 GHz using coplanar waveguide structures. Pure acceptor doping by Fe was found to have a distinct influence on permittivity and dielectric loss-factor at kHz-frequencies and at GHz frequencies due to an internal bias field and pairs of associated defects. Co-doping with F significantly suppresses the influence of the internal bias field and defect-associates at low and microwave frequencies. The commutation quality factor at 10 GHz and E eff |
| Journal or Publication Title: | International Journal of Materials Research |
| Volume: | 99 |
| Divisions: | 18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics > Microwave Engineering 18 Department of Electrical Engineering and Information Technology 18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics |
| Date Deposited: | 27 Jan 2012 15:19 |
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