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Influence of Fe-F-co-doping on the dielectric properties of Ba0.6Sr0.4TiO3 thick-films

Paul, F. and Giere, A. and Menesklou, W. and Binder, J. R. and Scheele, P. and Jakoby, Rolf and Haußelt, J. (2008):
Influence of Fe-F-co-doping on the dielectric properties of Ba0.6Sr0.4TiO3 thick-films.
In: International Journal of Materials Research, pp. 1119-1128, 99, [Article]

Abstract

The influence of Fe acceptor and Fe?F acceptor?donor co-doping on the dielectric response of screen-printed Ba0.6Sr0.4TiO3 thick-films on alumina substrates has been investigated. The Ba0.6Sr0.4TiO3 powders were synthesized by freeze-drying of sols. Permittivity dielectric loss, and tunability were investigated at kHz frequencies with a planar metal-insulator-metal capacitor structure, and at GHz frequencies up to 40 GHz using coplanar waveguide structures. Pure acceptor doping by Fe was found to have a distinct influence on permittivity and dielectric loss-factor at kHz-frequencies and at GHz frequencies due to an internal bias field and pairs of associated defects. Co-doping with F significantly suppresses the influence of the internal bias field and defect-associates at low and microwave frequencies. The commutation quality factor at 10 GHz and E eff

Item Type: Article
Erschienen: 2008
Creators: Paul, F. and Giere, A. and Menesklou, W. and Binder, J. R. and Scheele, P. and Jakoby, Rolf and Haußelt, J.
Title: Influence of Fe-F-co-doping on the dielectric properties of Ba0.6Sr0.4TiO3 thick-films
Language: English
Abstract:

The influence of Fe acceptor and Fe?F acceptor?donor co-doping on the dielectric response of screen-printed Ba0.6Sr0.4TiO3 thick-films on alumina substrates has been investigated. The Ba0.6Sr0.4TiO3 powders were synthesized by freeze-drying of sols. Permittivity dielectric loss, and tunability were investigated at kHz frequencies with a planar metal-insulator-metal capacitor structure, and at GHz frequencies up to 40 GHz using coplanar waveguide structures. Pure acceptor doping by Fe was found to have a distinct influence on permittivity and dielectric loss-factor at kHz-frequencies and at GHz frequencies due to an internal bias field and pairs of associated defects. Co-doping with F significantly suppresses the influence of the internal bias field and defect-associates at low and microwave frequencies. The commutation quality factor at 10 GHz and E eff

Journal or Publication Title: International Journal of Materials Research
Volume: 99
Divisions: 18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics > Microwave Engineering
18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics
Date Deposited: 27 Jan 2012 15:19
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