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Imaging defects and junctions in single-walled carbon nanotubes by voltage-contrast scanning electron microscopy

Vijayaraghavan, Aravind and Marquardt, Christoph W. and Dehm, Simone and Hennrich, Frank and Krupke, Ralph (2009):
Imaging defects and junctions in single-walled carbon nanotubes by voltage-contrast scanning electron microscopy.
In: Carbon, 48 (2), pp. 494-500, ISSN 00086223,
[Online-Edition: http://dx.doi.org/10.1016/j.carbon.2009.09.067],
[Article]

Abstract

Voltage-contrast scanning electron microscopy is demonstrated as a new technique to locate and characterize defects in single-walled carbon nanotubes. This method images the surface potential along and surrounding a nanotube in device configuration and it is used here to study the following: (a) structural point-defects formed during nanotube growth, (b) nano-scale gap formed by high-current electrical breakdown, (c) electronic defect such as electron-irradiation induced metal-insulator transition, and (d) charge injection into the substrate which causes hysteresis in nanotube devices. The in situ characterization of defect healing under high bias is also shown. The origin of voltage-contrast, the influence of the above defects on the contrast profiles and optimum imaging conditions are discussed.

Item Type: Article
Erschienen: 2009
Creators: Vijayaraghavan, Aravind and Marquardt, Christoph W. and Dehm, Simone and Hennrich, Frank and Krupke, Ralph
Title: Imaging defects and junctions in single-walled carbon nanotubes by voltage-contrast scanning electron microscopy
Language: English
Abstract:

Voltage-contrast scanning electron microscopy is demonstrated as a new technique to locate and characterize defects in single-walled carbon nanotubes. This method images the surface potential along and surrounding a nanotube in device configuration and it is used here to study the following: (a) structural point-defects formed during nanotube growth, (b) nano-scale gap formed by high-current electrical breakdown, (c) electronic defect such as electron-irradiation induced metal-insulator transition, and (d) charge injection into the substrate which causes hysteresis in nanotube devices. The in situ characterization of defect healing under high bias is also shown. The origin of voltage-contrast, the influence of the above defects on the contrast profiles and optimum imaging conditions are discussed.

Journal or Publication Title: Carbon
Volume: 48
Number: 2
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Fachgebiet Molekulare Nanostrukturen
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences
Date Deposited: 08 Nov 2011 12:26
Official URL: http://dx.doi.org/10.1016/j.carbon.2009.09.067
Identification Number: doi:10.1016/j.carbon.2009.09.067
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