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Electronic and Chemical Properties of Tin-Doped Indium Oxide (ITO) Surfaces and ITO/ZnPc Interfaces Studied In-situ by Photoelectron Spectroscopy

Gassenbauer, Yvonne and Klein, Andreas (2006):
Electronic and Chemical Properties of Tin-Doped Indium Oxide (ITO) Surfaces and ITO/ZnPc Interfaces Studied In-situ by Photoelectron Spectroscopy.
In: The Journal of Physical Chemistry B, pp. 4793-4801, 110, (10), ISSN 1520-6106,
[Online-Edition: http://dx.doi.org/10.1021/jp056640b],
[Article]

Abstract

The chemical and electronic properties of tin-doped indium oxide (ITO) surfaces and its interface with zinc phthalocyanine (ZnPc) were investigated using photoelectron spectroscopy partly excited by synchrotron radiation from the BESSY II storage ring. Preparation and analysis of ITO and ITO/ZnPc layer sequences were performed in-situ without breaking vacuum. The Fermi level position at the ITO surface varies strongly with oxygen content in the sputter gas, which is attributed to an increase of surface band bending as a consequence of the passivation of the metallic surface states of ITO. The shift of the Fermi level is accompanied by a parallel increase of the work function from 4.4 to 5.2 eV. No changes in the surface dipole are observed with an ionization potential of IP = 7.65 ± 0.1 eV. The barrier height for hole injection at the ITO/ZnPc interface does not vary with initial ITO work function, which can be related to different chemical reactivities at the interface.

Item Type: Article
Erschienen: 2006
Creators: Gassenbauer, Yvonne and Klein, Andreas
Title: Electronic and Chemical Properties of Tin-Doped Indium Oxide (ITO) Surfaces and ITO/ZnPc Interfaces Studied In-situ by Photoelectron Spectroscopy
Language: English
Abstract:

The chemical and electronic properties of tin-doped indium oxide (ITO) surfaces and its interface with zinc phthalocyanine (ZnPc) were investigated using photoelectron spectroscopy partly excited by synchrotron radiation from the BESSY II storage ring. Preparation and analysis of ITO and ITO/ZnPc layer sequences were performed in-situ without breaking vacuum. The Fermi level position at the ITO surface varies strongly with oxygen content in the sputter gas, which is attributed to an increase of surface band bending as a consequence of the passivation of the metallic surface states of ITO. The shift of the Fermi level is accompanied by a parallel increase of the work function from 4.4 to 5.2 eV. No changes in the surface dipole are observed with an ionization potential of IP = 7.65 ± 0.1 eV. The barrier height for hole injection at the ITO/ZnPc interface does not vary with initial ITO work function, which can be related to different chemical reactivities at the interface.

Journal or Publication Title: The Journal of Physical Chemistry B
Volume: 110
Number: 10
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Surface Science
Zentrale Einrichtungen
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue > D - Component properties
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue > D - Component properties > Subproject D3: Function and fatigue of oxide electrodes in organic light emitting diodes
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres
DFG-Collaborative Research Centres (incl. Transregio)
Date Deposited: 16 Sep 2011 13:12
Official URL: http://dx.doi.org/10.1021/jp056640b
Additional Information:

SFB 595 D3

Identification Number: doi:10.1021/jp056640b
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