Gassenbauer, Y. and Wachau, A. and Klein, Andreas (2009):
Chemical and electronic properties of the ITO/Al2O3 interface.
In: Physical Chemistry Chemical Physics, 11 (17), pp. 3049-3054. ISSN 1463-9076,
[Article]
Official URL: http://dx.doi.org/10.1039/b822848e
Abstract
The interface formation between transparent conducting Sn-doped indium oxide (ITO) and dielectric aluminium oxide has been studied by photoelectron spectroscopy using in situ sample preparation by magnetron sputtering. The electronic structure including band alignment, changes in Fermi level position and work function is determined. The changes of Fermi level are related to the deposition technique used.
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