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Band alignment at the BaCuSeF/ZnTe interface

Zakutayev, A. and Tate, Janet and Platt, H. A. S. and Keszler, D. A. and Barati, A. and Klein, Andreas and Jaegermann, W. (2010):
Band alignment at the BaCuSeF/ZnTe interface.
In: Applied Physics Letters, pp. 162110-1, 96, (16), ISSN 00036951,
[Online-Edition: http://dx.doi.org/10.1063/1.3405757],
[Article]

Abstract

In situ photoemission spectroscopy experiments are used to characterize the interface between ZnTe and the wide band gap p-type semiconductor BaCuSeF. The contact is characterized by a null valence-band offset, a large conduction-band offset, and a chemically graded interface. By applying the transitivity rule for band offset and on the basis of similarities in chemical composition, BaCuSeF contact to chalcogenide photovoltaic absorber materials would be expected to have similar properties. By extension, BaCuChF (Ch = S,Se,Te) materials are suitable as p-layers in p-i-n double-heterojunction solar cells fabricated with CdTe, Cu(InGa)Se2, and Cu2ZnSnS4 absorbers.

Item Type: Article
Erschienen: 2010
Creators: Zakutayev, A. and Tate, Janet and Platt, H. A. S. and Keszler, D. A. and Barati, A. and Klein, Andreas and Jaegermann, W.
Title: Band alignment at the BaCuSeF/ZnTe interface
Language: English
Abstract:

In situ photoemission spectroscopy experiments are used to characterize the interface between ZnTe and the wide band gap p-type semiconductor BaCuSeF. The contact is characterized by a null valence-band offset, a large conduction-band offset, and a chemically graded interface. By applying the transitivity rule for band offset and on the basis of similarities in chemical composition, BaCuSeF contact to chalcogenide photovoltaic absorber materials would be expected to have similar properties. By extension, BaCuChF (Ch = S,Se,Te) materials are suitable as p-layers in p-i-n double-heterojunction solar cells fabricated with CdTe, Cu(InGa)Se2, and Cu2ZnSnS4 absorbers.

Journal or Publication Title: Applied Physics Letters
Volume: 96
Number: 16
Uncontrolled Keywords: barium compounds, chalcogenide glasses, conduction bands, copper compounds, II-VI semiconductors, interface states, nanocontacts, p-n heterojunctions, selenium compounds, solar cells, valence bands, wide band gap semiconductors, X-ray photoelectron spectra, zinc compounds
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Surface Science
Zentrale Einrichtungen
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue > D - Component properties
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue > D - Component properties > Subproject D3: Function and fatigue of oxide electrodes in organic light emitting diodes
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue > D - Component properties > Subproject D5: Processing and characterization of Li-Ion Thin film batteries
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres
DFG-Collaborative Research Centres (incl. Transregio)
Date Deposited: 16 Sep 2011 12:29
Official URL: http://dx.doi.org/10.1063/1.3405757
Additional Information:

SFB 595 Cooperation D3, D5

Identification Number: doi:10.1063/1.3405757
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