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Charge-carrier injection and transport in organic light-emitting diodes: Single-particle versus mean-field approach

Melzer, Christian ; Genenko, Yuri A. ; Yampolskii, Sergey V. ; Stegmaier, Katja ; Ottinger, Oliver M. ; Seggern, Heinz von (2011)
Charge-carrier injection and transport in organic light-emitting diodes: Single-particle versus mean-field approach.
In: Journal of Photonics for Energy, 1 (1)
doi: 10.1117/1.3534762
Artikel, Bibliographie

Kurzbeschreibung (Abstract)

In the framework of the one-dimensional mean-field (MF) drift-diffusion approach the well-defined boundary conditions far away from the metal/insulator contacts of a planar metal/insulator/metal system are used to determine the boundary condition at the interface itself. The novel self-consistent boundary condition linking the carrier density and the electric field at the interface enables a straightforward description of the current voltage (IV) characteristics in forward and reverse bias bridging space charge and injection-limited regimes and accounting for barrier lowering from the potential drop in the used contact materials. Yet, because of the low carrier density in the insulator under injection limitation, single-particle phenomena, such as the Schottky effect, must be considered. We reconsider the validity of the MF approach, depending on the external bias and the prevailing injection barriers. For the crucial parameter window where the MF approach fails and single-particle phenomena become important, a modification of the boundary conditions at the insulator/metal interface is proposed to account for the discrete nature of carriers. The difference between the thus modified MF and the unmodified MF approach is illustrated by several examples.

Typ des Eintrags: Artikel
Erschienen: 2011
Autor(en): Melzer, Christian ; Genenko, Yuri A. ; Yampolskii, Sergey V. ; Stegmaier, Katja ; Ottinger, Oliver M. ; Seggern, Heinz von
Art des Eintrags: Bibliographie
Titel: Charge-carrier injection and transport in organic light-emitting diodes: Single-particle versus mean-field approach
Sprache: Englisch
Publikationsjahr: 7 Februar 2011
Titel der Zeitschrift, Zeitung oder Schriftenreihe: Journal of Photonics for Energy
Jahrgang/Volume einer Zeitschrift: 1
(Heft-)Nummer: 1
DOI: 10.1117/1.3534762
Kurzbeschreibung (Abstract):

In the framework of the one-dimensional mean-field (MF) drift-diffusion approach the well-defined boundary conditions far away from the metal/insulator contacts of a planar metal/insulator/metal system are used to determine the boundary condition at the interface itself. The novel self-consistent boundary condition linking the carrier density and the electric field at the interface enables a straightforward description of the current voltage (IV) characteristics in forward and reverse bias bridging space charge and injection-limited regimes and accounting for barrier lowering from the potential drop in the used contact materials. Yet, because of the low carrier density in the insulator under injection limitation, single-particle phenomena, such as the Schottky effect, must be considered. We reconsider the validity of the MF approach, depending on the external bias and the prevailing injection barriers. For the crucial parameter window where the MF approach fails and single-particle phenomena become important, a modification of the boundary conditions at the insulator/metal interface is proposed to account for the discrete nature of carriers. The difference between the thus modified MF and the unmodified MF approach is illustrated by several examples.

Freie Schlagworte: carrier density, diffusion, metal-insulator boundaries, MIM structures, organic light emitting diodes, organic semiconductors, Schottky barriers
Zusätzliche Informationen:

SFB 595 Cooperation C5,D4

Fachbereich(e)/-gebiet(e): DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche > SFB 595: Elektrische Ermüdung > C - Modellierung > Teilprojekt C5: Phänomenologische Modellierung von Injektion, Transport und Rekombination in Bauelementen aus organischen Halbleitern sowie aus nichtorganischen Ferroelektrika
DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche > SFB 595: Elektrische Ermüdung > D - Bauteileigenschaften > Teilprojekt D4: Betriebsbedingte Ermüdung von Bauelementen aus organischen Halbleitern
DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche > SFB 595: Elektrische Ermüdung > C - Modellierung
DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche > SFB 595: Elektrische Ermüdung > D - Bauteileigenschaften
DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche > SFB 595: Elektrische Ermüdung
Zentrale Einrichtungen
DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche
DFG-Sonderforschungsbereiche (inkl. Transregio)
Hinterlegungsdatum: 16 Sep 2011 08:03
Letzte Änderung: 05 Mär 2013 09:54
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