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Influence of electrical fatigue on hole transport in poly(p-phenylenevinylene)-based organic light-emitting diodes

Stegmaier, Katja and Fleissner, Arne and Janning, Helga and Yampolskii, Sergey and Melzer, Christian and Seggern, Heinz von (2011):
Influence of electrical fatigue on hole transport in poly(p-phenylenevinylene)-based organic light-emitting diodes.
In: Journal of Applied Physics, pp. 034507-1, 110, (3), ISSN 00218979, [Online-Edition: http://dx.doi.org/10.1063/1.3610381],
[Article]

Abstract

The hole transport in poly(p-phenylenevinylene) (PPV) was investigated before and after bipolar electrical stress by the time-of-flight (TOF) method. Bipolar structures similar to organic light emitting diodes (OLEDs) were realized, yet with much thicker layers than usually prevailing in OLEDs. During fatigue, the hole mobility is reduced, the field dependence of the mobility is increased, and the hole transport becomes more and more dispersive. These results go along with the fatigue behavior of thin film OLEDs that were investigated by charge extraction via linearly increasing voltage (CELIV). Even though theoretical simulations could show that both thick- and thin-film PPV-based OLED structures are dominated by holes, the presented results indicate that the existence of electrons leads to degradation during hole transport. A possible reason for an enlarged electron density in the otherwise hole dominated device is suggested.

Item Type: Article
Erschienen: 2011
Creators: Stegmaier, Katja and Fleissner, Arne and Janning, Helga and Yampolskii, Sergey and Melzer, Christian and Seggern, Heinz von
Title: Influence of electrical fatigue on hole transport in poly(p-phenylenevinylene)-based organic light-emitting diodes
Language: German
Abstract:

The hole transport in poly(p-phenylenevinylene) (PPV) was investigated before and after bipolar electrical stress by the time-of-flight (TOF) method. Bipolar structures similar to organic light emitting diodes (OLEDs) were realized, yet with much thicker layers than usually prevailing in OLEDs. During fatigue, the hole mobility is reduced, the field dependence of the mobility is increased, and the hole transport becomes more and more dispersive. These results go along with the fatigue behavior of thin film OLEDs that were investigated by charge extraction via linearly increasing voltage (CELIV). Even though theoretical simulations could show that both thick- and thin-film PPV-based OLED structures are dominated by holes, the presented results indicate that the existence of electrons leads to degradation during hole transport. A possible reason for an enlarged electron density in the otherwise hole dominated device is suggested.

Journal or Publication Title: Journal of Applied Physics
Volume: 110
Number: 3
Uncontrolled Keywords: conducting polymers, electron density, fatigue, hole mobility, organic light emitting diodes, organic semiconductors, time of flight spectra
Divisions: DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue > C - Modelling > Subproject C5: Phenomenological modelling of injection, transport and recombination in organic semiconducting devices as well as in inorganic ferroelectric materials
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue > D - Component properties
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue > D - Component properties > Subproject D4: Fatigue of organic electronic devices
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue > C - Modelling
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue
Zentrale Einrichtungen
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres
DFG-Collaborative Research Centres (incl. Transregio)
Date Deposited: 12 Sep 2011 13:29
Official URL: http://dx.doi.org/10.1063/1.3610381
Additional Information:

SFB 595 Cooperation C5, D4

Identification Number: doi:10.1063/1.3610381
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