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Electrochemically fabricated high-barrier Schottky contacts on n-InP and their application for metal-semiconductor-metal photodetectors

Dumka, Deep C. and Riemenschneider, and Miao, and Hartnagel, and Singh, (1996):
Electrochemically fabricated high-barrier Schottky contacts on n-InP and their application for metal-semiconductor-metal photodetectors.
In: Journal of the Electrochemical Society. 143 (1996), S. 1945-1948, [Article]

Item Type: Article
Erschienen: 1996
Creators: Dumka, Deep C. and Riemenschneider, and Miao, and Hartnagel, and Singh,
Title: Electrochemically fabricated high-barrier Schottky contacts on n-InP and their application for metal-semiconductor-metal photodetectors
Language: English
Journal or Publication Title: Journal of the Electrochemical Society. 143 (1996), S. 1945-1948
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Microwave Electronics
Date Deposited: 19 Nov 2008 16:00
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