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Bipolar charge-carrier injection in semiconductor/insulator/conductor heterostructures: Self-consistent consideration

Yampolskii, Sergey V. and Genenko, Yuri A. and Melzer, Christian and Stegmaier, Katja and Seggern, Heinz von (2008):
Bipolar charge-carrier injection in semiconductor/insulator/conductor heterostructures: Self-consistent consideration.
In: Journal of Applied Physics, pp. 073719-1-073719-13, 104, (7), ISSN 00218979,
[Online-Edition: http://dx.doi.org/10.1063/1.2990051],
[Article]

Abstract

A self-consistent model of bipolar charge-carrier injection and transport processes in a semiconductor/insulator/conductor system is developed, which incorporates space-charge effects in the description of the injection process. The amount of charge carriers injected is strongly determined by the energy barrier emerging at the contact, but at the same time the electrostatic potential generated by the injected charge carriers modifies the height of this injection barrier itself. In our model, self-consistency is obtained by assuming continuity of the electric displacement and of the electrochemical potential all over the system. The constituents of the system are properly taken into account by means of their respective density of state distributions. The consequences resulting from our model are discussed on the basis of an indium tin oxide/organic semiconductor/conductor structure. The distributions of the charge carriers and the electric field through the electrodes and the organic layer are calculated. The recombination- and current-voltage characteristics are analyzed for different heights of injection barriers and varying values of the recombination rate and compared with the measured current-voltage dependences for an indium tin oxide/poly(phenylene vinylene)/Ca structure. The voltage dependences of the recombination efficiency for the different values of injection barriers and recombination rate reveal optimum conditions for the device performance.

Item Type: Article
Erschienen: 2008
Creators: Yampolskii, Sergey V. and Genenko, Yuri A. and Melzer, Christian and Stegmaier, Katja and Seggern, Heinz von
Title: Bipolar charge-carrier injection in semiconductor/insulator/conductor heterostructures: Self-consistent consideration
Language: English
Abstract:

A self-consistent model of bipolar charge-carrier injection and transport processes in a semiconductor/insulator/conductor system is developed, which incorporates space-charge effects in the description of the injection process. The amount of charge carriers injected is strongly determined by the energy barrier emerging at the contact, but at the same time the electrostatic potential generated by the injected charge carriers modifies the height of this injection barrier itself. In our model, self-consistency is obtained by assuming continuity of the electric displacement and of the electrochemical potential all over the system. The constituents of the system are properly taken into account by means of their respective density of state distributions. The consequences resulting from our model are discussed on the basis of an indium tin oxide/organic semiconductor/conductor structure. The distributions of the charge carriers and the electric field through the electrodes and the organic layer are calculated. The recombination- and current-voltage characteristics are analyzed for different heights of injection barriers and varying values of the recombination rate and compared with the measured current-voltage dependences for an indium tin oxide/poly(phenylene vinylene)/Ca structure. The voltage dependences of the recombination efficiency for the different values of injection barriers and recombination rate reveal optimum conditions for the device performance.

Journal or Publication Title: Journal of Applied Physics
Volume: 104
Number: 7
Uncontrolled Keywords: charge injection, electron-hole recombination, MIS structures, semiconductor-insulator boundaries, space charge
Divisions: DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue > C - Modelling > Subproject C5: Phenomenological modelling of injection, transport and recombination in organic semiconducting devices as well as in inorganic ferroelectric materials
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue > D - Component properties > Subproject D4: Fatigue of organic electronic devices
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue > C - Modelling
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue > D - Component properties
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue
Zentrale Einrichtungen
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres
DFG-Collaborative Research Centres (incl. Transregio)
Date Deposited: 14 Sep 2011 12:52
Official URL: http://dx.doi.org/10.1063/1.2990051
Additional Information:

SFB 595 Cooperation C5, D4

Identification Number: doi:10.1063/1.2990051
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