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Space-charge mechanism of aging in ferroelectrics: An analytically solvable two-dimensional model

Genenko, Yuri A. (2008):
Space-charge mechanism of aging in ferroelectrics: An analytically solvable two-dimensional model.
In: Physical Review B, pp. 214103-1-214103-7, 78, (21), ISSN 1098-0121,
[Online-Edition: http://dx.doi.org/10.1103/PhysRevB.78.214103],
[Article]

Abstract

A mechanism of point defect migration triggered by local depolarization fields is shown to explain some still inexplicable features of aging in acceptor-doped ferroelectrics. A drift-diffusion model of the coupled charged defect transport and electrostatic field relaxation within a two-dimensional domain configuration is treated numerically and analytically. Numerical results are given for the emerging internal bias field of about 1 kV/mm which levels off at dopant concentrations well below 1 mol %; the fact, long ago known experimentally but still not explained. For higher defect concentrations a closed solution of the model equations in the drift approximation as well as an explicit formula for the internal bias field is derived revealing the plausible time, temperature, and concentration dependencies of aging. The results are compared to those due to the mechanism of orientational reordering of defect dipoles.

Item Type: Article
Erschienen: 2008
Creators: Genenko, Yuri A.
Title: Space-charge mechanism of aging in ferroelectrics: An analytically solvable two-dimensional model
Language: English
Abstract:

A mechanism of point defect migration triggered by local depolarization fields is shown to explain some still inexplicable features of aging in acceptor-doped ferroelectrics. A drift-diffusion model of the coupled charged defect transport and electrostatic field relaxation within a two-dimensional domain configuration is treated numerically and analytically. Numerical results are given for the emerging internal bias field of about 1 kV/mm which levels off at dopant concentrations well below 1 mol %; the fact, long ago known experimentally but still not explained. For higher defect concentrations a closed solution of the model equations in the drift approximation as well as an explicit formula for the internal bias field is derived revealing the plausible time, temperature, and concentration dependencies of aging. The results are compared to those due to the mechanism of orientational reordering of defect dipoles.

Journal or Publication Title: Physical Review B
Volume: 78
Number: 21
Divisions: DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue > C - Modelling > Subproject C5: Phenomenological modelling of injection, transport and recombination in organic semiconducting devices as well as in inorganic ferroelectric materials
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue > C - Modelling
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue
Zentrale Einrichtungen
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres
DFG-Collaborative Research Centres (incl. Transregio)
Date Deposited: 17 Aug 2011 11:59
Official URL: http://dx.doi.org/10.1103/PhysRevB.78.214103
Additional Information:

SFB 595 C5

Identification Number: doi:10.1103/PhysRevB.78.214103
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