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Formation and modification of Schottky barriers at the PZT/Pt interface

Chen, Feng and Schafranek, Robert and Wu, Wenbin and Klein, Andreas (2009):
Formation and modification of Schottky barriers at the PZT/Pt interface.
42, In: Journal of Physics D: Applied Physics, (21), pp. 215302-1-215302-5, ISSN 0022-3727, [Online-Edition: http://dx.doi.org/10.1088/0022-3727/42/21/215302],
[Article]

Abstract

A determination of the Schottky barrier height at the interface between ferroelectric Pb(Zr,Ti)O3 thin films and Pt by photoelectron spectroscopy is presented. Stepwise Pt deposition was performed in situ onto a contamination-free Pb(Zr,Ti)O3 thin film surface. The substrate surface is reduced in the course of Pt deposition as evident from the observation of metallic Pb. The Fermi level is found at EF − EVB = 1.6 ± 0.1 eV above the valence band maximum of the as-prepared interface. Annealing of the sample in an oxygen pressure of 0.1 and 1 Pa strongly reduces the amount of metallic Pb and leads to a reduction in the Fermi level position at the interface to EF − EVB = 1.1 ± 0.1 eV. Storage in vacuum at room temperature strongly reduces the interface leading to a significantly higher Fermi level position (EF − EVB = 2.2 ± 0.1 eV). The reduction is attributed to the presence of hydrogen in the residual gas. The change in barrier height might be a severe issue for stable device operation with Pt contacts even at ambient temperatures.

Item Type: Article
Erschienen: 2009
Creators: Chen, Feng and Schafranek, Robert and Wu, Wenbin and Klein, Andreas
Title: Formation and modification of Schottky barriers at the PZT/Pt interface
Language: English
Abstract:

A determination of the Schottky barrier height at the interface between ferroelectric Pb(Zr,Ti)O3 thin films and Pt by photoelectron spectroscopy is presented. Stepwise Pt deposition was performed in situ onto a contamination-free Pb(Zr,Ti)O3 thin film surface. The substrate surface is reduced in the course of Pt deposition as evident from the observation of metallic Pb. The Fermi level is found at EF − EVB = 1.6 ± 0.1 eV above the valence band maximum of the as-prepared interface. Annealing of the sample in an oxygen pressure of 0.1 and 1 Pa strongly reduces the amount of metallic Pb and leads to a reduction in the Fermi level position at the interface to EF − EVB = 1.1 ± 0.1 eV. Storage in vacuum at room temperature strongly reduces the interface leading to a significantly higher Fermi level position (EF − EVB = 2.2 ± 0.1 eV). The reduction is attributed to the presence of hydrogen in the residual gas. The change in barrier height might be a severe issue for stable device operation with Pt contacts even at ambient temperatures.

Journal or Publication Title: Journal of Physics D: Applied Physics
Volume: 42
Number: 21
Divisions: DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue > B - Characterisation > Subproject B7: Polarisation and charging in electrical fatigue ferroelectrics
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue > B - Characterisation
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue
Zentrale Einrichtungen
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres
DFG-Collaborative Research Centres (incl. Transregio)
Date Deposited: 15 Aug 2011 12:38
Official URL: http://dx.doi.org/10.1088/0022-3727/42/21/215302
Additional Information:

SFB 595 B7

Identification Number: doi:10.1088/0022-3727/42/21/215302
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