Chen, Feng ; Schafranek, Robert ; Wu, Wenbin ; Klein, Andreas (2009)
Formation and modification of Schottky barriers at the PZT/Pt interface.
In: Journal of Physics D: Applied Physics, 42 (21)
doi: 10.1088/0022-3727/42/21/215302
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
A determination of the Schottky barrier height at the interface between ferroelectric Pb(Zr,Ti)O3 thin films and Pt by photoelectron spectroscopy is presented. Stepwise Pt deposition was performed in situ onto a contamination-free Pb(Zr,Ti)O3 thin film surface. The substrate surface is reduced in the course of Pt deposition as evident from the observation of metallic Pb. The Fermi level is found at EF − EVB = 1.6 ± 0.1 eV above the valence band maximum of the as-prepared interface. Annealing of the sample in an oxygen pressure of 0.1 and 1 Pa strongly reduces the amount of metallic Pb and leads to a reduction in the Fermi level position at the interface to EF − EVB = 1.1 ± 0.1 eV. Storage in vacuum at room temperature strongly reduces the interface leading to a significantly higher Fermi level position (EF − EVB = 2.2 ± 0.1 eV). The reduction is attributed to the presence of hydrogen in the residual gas. The change in barrier height might be a severe issue for stable device operation with Pt contacts even at ambient temperatures.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2009 |
| Autor(en): | Chen, Feng ; Schafranek, Robert ; Wu, Wenbin ; Klein, Andreas |
| Art des Eintrags: | Bibliographie |
| Titel: | Formation and modification of Schottky barriers at the PZT/Pt interface |
| Sprache: | Englisch |
| Publikationsjahr: | November 2009 |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Journal of Physics D: Applied Physics |
| Jahrgang/Volume einer Zeitschrift: | 42 |
| (Heft-)Nummer: | 21 |
| DOI: | 10.1088/0022-3727/42/21/215302 |
| Kurzbeschreibung (Abstract): | A determination of the Schottky barrier height at the interface between ferroelectric Pb(Zr,Ti)O3 thin films and Pt by photoelectron spectroscopy is presented. Stepwise Pt deposition was performed in situ onto a contamination-free Pb(Zr,Ti)O3 thin film surface. The substrate surface is reduced in the course of Pt deposition as evident from the observation of metallic Pb. The Fermi level is found at EF − EVB = 1.6 ± 0.1 eV above the valence band maximum of the as-prepared interface. Annealing of the sample in an oxygen pressure of 0.1 and 1 Pa strongly reduces the amount of metallic Pb and leads to a reduction in the Fermi level position at the interface to EF − EVB = 1.1 ± 0.1 eV. Storage in vacuum at room temperature strongly reduces the interface leading to a significantly higher Fermi level position (EF − EVB = 2.2 ± 0.1 eV). The reduction is attributed to the presence of hydrogen in the residual gas. The change in barrier height might be a severe issue for stable device operation with Pt contacts even at ambient temperatures. |
| Zusätzliche Informationen: | SFB 595 B7 |
| Fachbereich(e)/-gebiet(e): | DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche > SFB 595: Elektrische Ermüdung > B - Charakterisierung > Teilprojekt B7:Polarisation und Ladung in elektrisch ermüdeten Ferroelektrika DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche > SFB 595: Elektrische Ermüdung > B - Charakterisierung DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche > SFB 595: Elektrische Ermüdung Zentrale Einrichtungen DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche DFG-Sonderforschungsbereiche (inkl. Transregio) |
| Hinterlegungsdatum: | 15 Aug 2011 12:38 |
| Letzte Änderung: | 05 Mär 2013 09:51 |
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