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Growth kinetics and stoichiometry of ZnS films obtained by close-spaced vacuum sublimation technique

Kurbatov, D. ; Opanasyuk, A. ; Duvanov, S. M. ; Balogh, A. G. ; Khlyap, H. (2011)
Growth kinetics and stoichiometry of ZnS films obtained by close-spaced vacuum sublimation technique.
In: Solid State Sciences, 13 (5)
Artikel, Bibliographie

Kurzbeschreibung (Abstract)

Surface roughness, stoichiometry, deposition rates and activation energy of different growth mechanisms of zinc sulfide films are investigated. The films were deposited onto glass-ceramic substrates by close-spaced vacuum sublimation technique (CSVS) at different deposition temperatures. Rutherford backscattering spectroscopy (RBS) using helium ions with 1.8 MeV energy and EDAX method were applied for determination of film thickness and stoichiometry. The effect of the deposition temperature on film properties has been studied.

Typ des Eintrags: Artikel
Erschienen: 2011
Autor(en): Kurbatov, D. ; Opanasyuk, A. ; Duvanov, S. M. ; Balogh, A. G. ; Khlyap, H.
Art des Eintrags: Bibliographie
Titel: Growth kinetics and stoichiometry of ZnS films obtained by close-spaced vacuum sublimation technique
Sprache: Englisch
Publikationsjahr: Mai 2011
Verlag: Elsevier Science Publishing Company
Titel der Zeitschrift, Zeitung oder Schriftenreihe: Solid State Sciences
Jahrgang/Volume einer Zeitschrift: 13
(Heft-)Nummer: 5
URL / URN: http://www.sciencedirect.com/science/article/pii/S1293255811...
Kurzbeschreibung (Abstract):

Surface roughness, stoichiometry, deposition rates and activation energy of different growth mechanisms of zinc sulfide films are investigated. The films were deposited onto glass-ceramic substrates by close-spaced vacuum sublimation technique (CSVS) at different deposition temperatures. Rutherford backscattering spectroscopy (RBS) using helium ions with 1.8 MeV energy and EDAX method were applied for determination of film thickness and stoichiometry. The effect of the deposition temperature on film properties has been studied.

Freie Schlagworte: Deposition rate, Rutherford backscattering spectrometry, Stoichiometry, ZnS films
Fachbereich(e)/-gebiet(e): 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Materialanalytik
11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft
11 Fachbereich Material- und Geowissenschaften
Hinterlegungsdatum: 25 Jul 2011 13:37
Letzte Änderung: 05 Mär 2013 09:51
PPN:
Sponsoren: This work was supported by the Project No 0110U001151 of the Ministry of Science and Education of the Ukraine and Bilateral Co-operation Project UKR05/003 of the Ministry of Science and Education of the Ukraine, and International Büro of BMBF at DLR, Germany.
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