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Third and fourth harmonic generation at Si-SiO₂ interfaces and in Si-SiO2-Cr MOS structures

Kempf, Roland and Wilson, P. T. and Canterbury, J. D. and Mishina, E. D. and Aktsipetrov, O. A. (1999):
Third and fourth harmonic generation at Si-SiO₂ interfaces and in Si-SiO2-Cr MOS structures.
In: Applied Physics B, pp. 325-332, (68), [Article]

Item Type: Article
Erschienen: 1999
Creators: Kempf, Roland and Wilson, P. T. and Canterbury, J. D. and Mishina, E. D. and Aktsipetrov, O. A.
Title: Third and fourth harmonic generation at Si-SiO₂ interfaces and in Si-SiO2-Cr MOS structures
Language: German
Journal or Publication Title: Applied Physics B
Number: 68
Divisions: 18 Department of Electrical Engineering and Information Technology > Institut für Automatisierungstechnik und Mechatronik > Control Methods and Robotics
18 Department of Electrical Engineering and Information Technology > Institut für Automatisierungstechnik und Mechatronik
18 Department of Electrical Engineering and Information Technology
Date Deposited: 18 Aug 2010 14:30
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