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Ion beam mixing in uranium nitride thin films studied by Rutherford Backscattering Spectroscopy

Kim-Ngan, N.-T. H. and Balogh, A. G. and Havela, L. and Gouder, T. (2010):
Ion beam mixing in uranium nitride thin films studied by Rutherford Backscattering Spectroscopy.
268, In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, (11-12), Elsevier Science Publishing Company, pp. 1875-1879, [Online-Edition: http://www.sciencedirect.com/science/article/B6TJN-4YG7JPT-G...],
[Article]

Abstract

Thickness, composition, concentration depth profile and ion irradiation effects on uranium nitride thin films deposited on fused silica have been investigated by Rutherford Backscattering Spectroscopy (RBS) using 2 MeV He+ ions. The films were prepared by reactive DC sputtering at the temperatures of −200 °C, +25 °C and +300 °C. A perfect 1U:1N stoichiometry with a layer thickness of 660 nm was found for the film deposited at −200 °C. An increase of the deposition temperature led to an enhancement of surface oxidation and an increase of the thickness of the mixed U–N–Si–O layers at the interface. The sample irradiation by 1 MeV Ar+ ion beam with ion fluence of about 1.2–1.7 × 1016 ions/cm2 caused a large change in the layer composition and a large increase of the total film thickness for the films deposited at −200 °C and at +25 °C, but almost no change in the film thickness was detected for the film deposited at +300 °C. An enhanced mixing effect for this film was obtained after further irradiation with ion fluence of 2.3 × 1016 ions/cm2.

Item Type: Article
Erschienen: 2010
Creators: Kim-Ngan, N.-T. H. and Balogh, A. G. and Havela, L. and Gouder, T.
Title: Ion beam mixing in uranium nitride thin films studied by Rutherford Backscattering Spectroscopy
Language: English
Abstract:

Thickness, composition, concentration depth profile and ion irradiation effects on uranium nitride thin films deposited on fused silica have been investigated by Rutherford Backscattering Spectroscopy (RBS) using 2 MeV He+ ions. The films were prepared by reactive DC sputtering at the temperatures of −200 °C, +25 °C and +300 °C. A perfect 1U:1N stoichiometry with a layer thickness of 660 nm was found for the film deposited at −200 °C. An increase of the deposition temperature led to an enhancement of surface oxidation and an increase of the thickness of the mixed U–N–Si–O layers at the interface. The sample irradiation by 1 MeV Ar+ ion beam with ion fluence of about 1.2–1.7 × 1016 ions/cm2 caused a large change in the layer composition and a large increase of the total film thickness for the films deposited at −200 °C and at +25 °C, but almost no change in the film thickness was detected for the film deposited at +300 °C. An enhanced mixing effect for this film was obtained after further irradiation with ion fluence of 2.3 × 1016 ions/cm2.

Journal or Publication Title: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Volume: 268
Number: 11-12
Publisher: Elsevier Science Publishing Company
Uncontrolled Keywords: Uranium nitride films; RBS; Sputtering; Ion beam mixing
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Material Analytics
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences
Date Deposited: 09 Jul 2010 10:41
Official URL: http://www.sciencedirect.com/science/article/B6TJN-4YG7JPT-G...
Additional Information:

19th International Conference on Ion Beam Analysis

Funders: The financial support from German Academic Exchange Service (DAAD) – D/08/07729 project (between Germany and Poland) is highly acknowledged., A.G.B. acknowledges the financial support by German Research Foundation (DFG) – SFB-595 project., L.H. acknowledges the financial support by the Czech Research PlanMSM 0021620834 and the Grant No. IAA100100912.
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