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Chemical bonding in carbonitride nanolayers

Hoffmann, P. and Baake, O. and Beckhoff, B. and Ensinger, W. and Fainer, N. and Klein, Andreas and Kosinova, M. and Pollakowski, B. and Trunova, V. and Ulm, G. and Weser, J. (2007):
Chemical bonding in carbonitride nanolayers.
In: Nuclear Instruments and Methods in Physics Research Section A, Elsevier, pp. 78-84, 575, (1-2), [Article]

Abstract

First results are presented for the identification of chemical bonds and structures (speciation) in boron and silicon carbonitrides, produced as layers of some hundred nm. The boron carbonitride (BCxNy) films are synthesized by low-pressure chemical vapor deposition (LPCVD) using the precursor substance trimethylamine borane. The samples of silicon carbonitride (SiCxNy) films are synthesized by plasma-enhanced chemical vapor deposition (PECVD) using hexamethyl disilazane. The measurements were performed by total reflection X-ray fluorescence analysis combined with near-edge X-ray absorption fine structure investigations (TXRF-NEXAFS) and by X-ray photo-electron spectroscopy (XPS). The results are compared with those obtained for standard samples boron carbide (B4C), boron nitride (e.g., h-BN, c-BN), silicon carbide (SiC), and silicon nitride (Si3N4).

Item Type: Article
Erschienen: 2007
Creators: Hoffmann, P. and Baake, O. and Beckhoff, B. and Ensinger, W. and Fainer, N. and Klein, Andreas and Kosinova, M. and Pollakowski, B. and Trunova, V. and Ulm, G. and Weser, J.
Title: Chemical bonding in carbonitride nanolayers
Language: English
Abstract:

First results are presented for the identification of chemical bonds and structures (speciation) in boron and silicon carbonitrides, produced as layers of some hundred nm. The boron carbonitride (BCxNy) films are synthesized by low-pressure chemical vapor deposition (LPCVD) using the precursor substance trimethylamine borane. The samples of silicon carbonitride (SiCxNy) films are synthesized by plasma-enhanced chemical vapor deposition (PECVD) using hexamethyl disilazane. The measurements were performed by total reflection X-ray fluorescence analysis combined with near-edge X-ray absorption fine structure investigations (TXRF-NEXAFS) and by X-ray photo-electron spectroscopy (XPS). The results are compared with those obtained for standard samples boron carbide (B4C), boron nitride (e.g., h-BN, c-BN), silicon carbide (SiC), and silicon nitride (Si3N4).

Journal or Publication Title: Nuclear Instruments and Methods in Physics Research Section A
Volume: 575
Number: 1-2
Publisher: Elsevier
Uncontrolled Keywords: Chemical bonding; Boron carbonitrides; Silicon carbonitrides; X-ray fluorescence analysis
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Material Analytics
11 Department of Materials and Earth Sciences > Material Science > Surface Science
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences
Date Deposited: 20 Nov 2008 08:28
Additional Information:

Proceedings of the XVI International Synchrotron Radiation Conference — SR 2006

Funders: The authors acknowledge the financial support granted by the German Research Foundation (DFG) for the joint research project “Nanolayer Speciation”., N.F., M.K., and V.T. thank RFBR for the Grant 06-03 32713 and Minobrnauka for the support of the leading scientific schools, by the Contract No. 02.445.11.7387., The authors are indebted to T. Holz, AXO Dresden, and P.U. Pennartz, Osmic, for placing a BN nanolayer and a B4C/SiC multiplayer, resp., to our disposal.
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