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High resolution electron microscopy study of molecular beam epitaxy grown CoSi2/Si1-xGex/Si(100) heterostructures

Buschmann, Veronique and Rodewald, M. and Fuess, H. and van Tendeloo, G. and Schäffer, C. :
High resolution electron microscopy study of molecular beam epitaxy grown CoSi2/Si1-xGex/Si(100) heterostructures.
In: Journal of applied physics, 85 pp. 2119-2123.
[Article] , (1999)

Item Type: Article
Erschienen: 1999
Creators: Buschmann, Veronique and Rodewald, M. and Fuess, H. and van Tendeloo, G. and Schäffer, C.
Title: High resolution electron microscopy study of molecular beam epitaxy grown CoSi2/Si1-xGex/Si(100) heterostructures
Language: English
Journal or Publication Title: Journal of applied physics
Volume: 85
Divisions: 11 Department of Materials and Earth Sciences > Fachbereich Materialwissenschaft (1999 aufgegangen in 11 Fachbereich Material- und Geowissenschaften)
11 Department of Materials and Earth Sciences
Date Deposited: 19 Nov 2008 15:54
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