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Atomic-scale simulations of radiation effects in GaN and carbon nanotubes

Nordlund, K. ; Nord, J. ; Krasheninnikov, A. V. ; Albe, Karsten :
Atomic-scale simulations of radiation effects in GaN and carbon nanotubes.
In: MRS proceedings, 792 R6.6.
[Artikel], (2004)

Kurzbeschreibung (Abstract)

Gallium nitride and carbon nanotubes have received wide interest in the materials research community since the mid-1990's. The former material is already in use in optoelectronics applications, while the latter is considered to be extremely promising in a wide range of materials. Common to both materials is that ion irradiation may be useful for modifying their properties. In this paper we overview our recent molecular dynamics simulations results on ion irradiation of these materials. We employ such potentials to study the basic physics of how ion irradiation affects these materials. In particular we discuss the reasons for the high radiation hardness of GaN, and the surprising nature of vacancies and interstitials in carbon nanotubes

Typ des Eintrags: Artikel
Erschienen: 2004
Autor(en): Nordlund, K. ; Nord, J. ; Krasheninnikov, A. V. ; Albe, Karsten
Titel: Atomic-scale simulations of radiation effects in GaN and carbon nanotubes
Sprache: Englisch
Kurzbeschreibung (Abstract):

Gallium nitride and carbon nanotubes have received wide interest in the materials research community since the mid-1990's. The former material is already in use in optoelectronics applications, while the latter is considered to be extremely promising in a wide range of materials. Common to both materials is that ion irradiation may be useful for modifying their properties. In this paper we overview our recent molecular dynamics simulations results on ion irradiation of these materials. We employ such potentials to study the basic physics of how ion irradiation affects these materials. In particular we discuss the reasons for the high radiation hardness of GaN, and the surprising nature of vacancies and interstitials in carbon nanotubes

Titel der Zeitschrift, Zeitung oder Schriftenreihe: MRS proceedings
Band: 792
Verlag: Mater. Res. Soc, Warrendale, PA, USA
Freie Schlagworte: carbon nanotubes, gallium compounds, hardness, III-V semiconductors, interstitials, ion beam effects, molecular dynamics method, vacancies (crystal), wide band gap semiconductors
Fachbereich(e)/-gebiet(e): Fachbereich Material- und Geowissenschaften > Materialwissenschaften > Materialmodellierung
Fachbereich Material- und Geowissenschaften > Materialwissenschaften
Fachbereich Material- und Geowissenschaften
Hinterlegungsdatum: 20 Nov 2008 08:25
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