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Atomic-scale simulations of radiation effects in GaN and carbon nanotubes

Nordlund, K. and Nord, J. and Krasheninnikov, A. V. and Albe, Karsten (2004):
Atomic-scale simulations of radiation effects in GaN and carbon nanotubes.
In: MRS proceedings, Mater. Res. Soc, Warrendale, PA, USA, pp. R6.6, 792, [Article]

Abstract

Gallium nitride and carbon nanotubes have received wide interest in the materials research community since the mid-1990's. The former material is already in use in optoelectronics applications, while the latter is considered to be extremely promising in a wide range of materials. Common to both materials is that ion irradiation may be useful for modifying their properties. In this paper we overview our recent molecular dynamics simulations results on ion irradiation of these materials. We employ such potentials to study the basic physics of how ion irradiation affects these materials. In particular we discuss the reasons for the high radiation hardness of GaN, and the surprising nature of vacancies and interstitials in carbon nanotubes

Item Type: Article
Erschienen: 2004
Creators: Nordlund, K. and Nord, J. and Krasheninnikov, A. V. and Albe, Karsten
Title: Atomic-scale simulations of radiation effects in GaN and carbon nanotubes
Language: English
Abstract:

Gallium nitride and carbon nanotubes have received wide interest in the materials research community since the mid-1990's. The former material is already in use in optoelectronics applications, while the latter is considered to be extremely promising in a wide range of materials. Common to both materials is that ion irradiation may be useful for modifying their properties. In this paper we overview our recent molecular dynamics simulations results on ion irradiation of these materials. We employ such potentials to study the basic physics of how ion irradiation affects these materials. In particular we discuss the reasons for the high radiation hardness of GaN, and the surprising nature of vacancies and interstitials in carbon nanotubes

Journal or Publication Title: MRS proceedings
Volume: 792
Publisher: Mater. Res. Soc, Warrendale, PA, USA
Uncontrolled Keywords: carbon nanotubes, gallium compounds, hardness, III-V semiconductors, interstitials, ion beam effects, molecular dynamics method, vacancies (crystal), wide band gap semiconductors
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Materials Modelling
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences
Date Deposited: 20 Nov 2008 08:25
License: [undefiniert]
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