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Electronic structure of the Si(111): GaSe van der Waals-like surface termination

Rudolph, R. and Pettenkofer, C. and Bostwick, A. A. and Adams, J. A. and Ohuchi, F. and Olmstead, M. A. and Jaeckel, B. and Klein, Andreas and Jaegermann, W. (2005):
Electronic structure of the Si(111): GaSe van der Waals-like surface termination.
In: New Journal of Physics, 7. pp. 108/1-108/20, ISSN 1367-2630,
[Article]

Item Type: Article
Erschienen: 2005
Creators: Rudolph, R. and Pettenkofer, C. and Bostwick, A. A. and Adams, J. A. and Ohuchi, F. and Olmstead, M. A. and Jaeckel, B. and Klein, Andreas and Jaegermann, W.
Title: Electronic structure of the Si(111): GaSe van der Waals-like surface termination
Language: English
Journal or Publication Title: New Journal of Physics
Journal volume: 7
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Surface Science
Date Deposited: 20 Nov 2008 08:20
Identification Number: doi:10.1088/1367-2630/7/1/108
License: [undefiniert]
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