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Barium titanate as a good insulator for InP and GaN MIS device applications

Sumathi, R. R. and Senthil Kumar, M. and Kumar, J. (2003):
Barium titanate as a good insulator for InP and GaN MIS device applications.
In: International School on Crystal Growth of Technologically Important Materials <2003, Mysore>: Proceedings ... ISCGTIEM-2003.- S. 184-188, [Conference or Workshop Item]

Item Type: Conference or Workshop Item
Erschienen: 2003
Creators: Sumathi, R. R. and Senthil Kumar, M. and Kumar, J.
Title: Barium titanate as a good insulator for InP and GaN MIS device applications
Language: English
Series Name: International School on Crystal Growth of Technologically Important Materials <2003, Mysore>: Proceedings ... ISCGTIEM-2003.- S. 184-188
Divisions: 11 Department of Materials and Earth Sciences
Date Deposited: 20 Nov 2008 08:16
License: [undefiniert]
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