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Raman and electrical characterisation of n-InP implanted by 630-keV nitrogen

Tiginyanu, I. and Miao, and Hartnagel, Hans L. and Rück, and Tinschert, and Ursaki, and Ichizli, Victoria M. (1996):
Raman and electrical characterisation of n-InP implanted by 630-keV nitrogen.
In: International Conference on Indium Phosphide and Related Materials <8, 1996, Schwäbisch Gmünd>: Proceedings, [Conference or Workshop Item]

Item Type: Conference or Workshop Item
Erschienen: 1996
Creators: Tiginyanu, I. and Miao, and Hartnagel, Hans L. and Rück, and Tinschert, and Ursaki, and Ichizli, Victoria M.
Title: Raman and electrical characterisation of n-InP implanted by 630-keV nitrogen
Language: English
Series Name: International Conference on Indium Phosphide and Related Materials <8, 1996, Schwäbisch Gmünd>: Proceedings
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Microwave Electronics
Date Deposited: 19 Nov 2008 16:30
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