TU Darmstadt / ULB / TUbiblio

Crystallization behavior of amorphous Si-C-N ceramics derived from organometallic precursors

Iwamoto, Y. ; Völger, W. ; Kroke, E. ; Riedel, R. (2001):
Crystallization behavior of amorphous Si-C-N ceramics derived from organometallic precursors.
84, In: Journal of the American Ceramic Society, (10), pp. 2170-2178. Wiley, [Article]

Abstract

The crystallization behavior of organometallic-precursor-derived amorphous Si-C-N ceramics was investigated under N2 atmosphere using X-ray diffractometry (XRD), transmission electron microscopy (TEM), and solid-state 29Si nuclear magnetic resonance (NMR) spectroscopy. Amorphous Si-C-N ceramics with a C/Si atomic ratio in the range of 0.34–1.13 were prepared using polycarbosilane-polysilazane blends, single-source polysilazanes, and single-source polysilylcarbodiimides. The XRD study indicated that the crystallization temperature of Si3N4 increased consistently with the C/Si atomic ratio and reached 1500°C at C/Si atomic ratios ranging from 0.53 to 1.13. This temperature was 300°C higher than that of the carbon-free amorphous Si-N material. In contrast, the SiC crystallization temperature showed no clear relation with the C/Si atomic ratio. The TEM and NMR analyses revealed that the crystallization of amorphous Si-C-N was governed by carbon content, chemical homogeneity, and molecular structure of the amorphous Si-C-N network

Item Type: Article
Erschienen: 2001
Creators: Iwamoto, Y. ; Völger, W. ; Kroke, E. ; Riedel, R.
Title: Crystallization behavior of amorphous Si-C-N ceramics derived from organometallic precursors
Language: English
Abstract:

The crystallization behavior of organometallic-precursor-derived amorphous Si-C-N ceramics was investigated under N2 atmosphere using X-ray diffractometry (XRD), transmission electron microscopy (TEM), and solid-state 29Si nuclear magnetic resonance (NMR) spectroscopy. Amorphous Si-C-N ceramics with a C/Si atomic ratio in the range of 0.34–1.13 were prepared using polycarbosilane-polysilazane blends, single-source polysilazanes, and single-source polysilylcarbodiimides. The XRD study indicated that the crystallization temperature of Si3N4 increased consistently with the C/Si atomic ratio and reached 1500°C at C/Si atomic ratios ranging from 0.53 to 1.13. This temperature was 300°C higher than that of the carbon-free amorphous Si-N material. In contrast, the SiC crystallization temperature showed no clear relation with the C/Si atomic ratio. The TEM and NMR analyses revealed that the crystallization of amorphous Si-C-N was governed by carbon content, chemical homogeneity, and molecular structure of the amorphous Si-C-N network

Journal or Publication Title: Journal of the American Ceramic Society
Volume: 84
Number: 10
Publisher: Wiley
Uncontrolled Keywords: crystals/crystallization, synthesis, silicon carbonitride
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Dispersive Solids
Date Deposited: 19 Nov 2008 16:27
Export:
Suche nach Titel in: TUfind oder in Google
Send an inquiry Send an inquiry

Options (only for editors)
Show editorial Details Show editorial Details