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Temperature dependence of planar channeling radiation in silicon, germanium, and beryllium between 12 and 330 K

Buschhorn, G. and Diedrich, E. and Kufner, W. and Rzepka, M. and Genz, H. and Hoffmann-Stascheck, P. and Richter, A. (1997):
Temperature dependence of planar channeling radiation in silicon, germanium, and beryllium between 12 and 330 K.
In: Physical review. B 55 (1997), S. 6196-6202, [Article]

Item Type: Article
Erschienen: 1997
Creators: Buschhorn, G. and Diedrich, E. and Kufner, W. and Rzepka, M. and Genz, H. and Hoffmann-Stascheck, P. and Richter, A.
Title: Temperature dependence of planar channeling radiation in silicon, germanium, and beryllium between 12 and 330 K
Language: English
Journal or Publication Title: Physical review. B 55 (1997), S. 6196-6202
Divisions: 05 Department of Physics
Date Deposited: 19 Nov 2008 16:24
Additional Information:

Ersch. ebenf. als: Techn. Hochschule Darmstadt, FB 5, Inst. für Kernphysik: IKDA; 97/5

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