Simsek Sanli, Ekin ; Ramasse, Quentin M. ; Sigle, Wilfried ; Abou-Ras, Daniel ; Mainz, Roland ; Weber, A. ; Kleebe, Hans‐Joachim ; Aken, Peter A. van (2022)
Elemental redistributions at structural defects in Cu(In,Ga)Se₂ thin films for solar cells.
In: Journal of Applied Physics, 120 (20)
doi: 10.26083/tuprints-00020479
Artikel, Zweitveröffentlichung, Verlagsversion
Kurzbeschreibung (Abstract)
The microstructural evolution of Cu(In,Ga)Se₂ absorber layers during a three-stage-type co-evaporation process was studied to elucidate the effect of a Cu-rich stage on the formation of extended structural defects. Defect densities for two Cu-poor samples, one interrupted before and one after this crucial Cu-rich composition stage, were investigated by scanning transmission electron microscopy (STEM) imaging. The structure and chemical nature of individual defects were investigated by aberration-corrected high-resolution STEM in combination with electron energy-loss spectroscopy on the atomic-scale. In spite of the different defect densities between the two samples, most of the individual defects exhibited similar chemistry. In particular, the elemental distributions of atomic columns at {112} twin planes, which are very frequent in Cu(In,Ga)Se₂ thin films, were found to be the same as in the defect-free grain interiors. In contrast, within grain boundaries, dislocation cores, and other structurally more complex defects, elemental redistributions of Cu and In were observed.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2022 |
| Autor(en): | Simsek Sanli, Ekin ; Ramasse, Quentin M. ; Sigle, Wilfried ; Abou-Ras, Daniel ; Mainz, Roland ; Weber, A. ; Kleebe, Hans‐Joachim ; Aken, Peter A. van |
| Art des Eintrags: | Zweitveröffentlichung |
| Titel: | Elemental redistributions at structural defects in Cu(In,Ga)Se₂ thin films for solar cells |
| Sprache: | Englisch |
| Publikationsjahr: | 2022 |
| Verlag: | AIP Publishing |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Journal of Applied Physics |
| Jahrgang/Volume einer Zeitschrift: | 120 |
| (Heft-)Nummer: | 20 |
| Kollation: | 7 Seiten |
| DOI: | 10.26083/tuprints-00020479 |
| URL / URN: | https://tuprints.ulb.tu-darmstadt.de/20479 |
| Zugehörige Links: | |
| Herkunft: | Zweitveröffentlichungsservice |
| Kurzbeschreibung (Abstract): | The microstructural evolution of Cu(In,Ga)Se₂ absorber layers during a three-stage-type co-evaporation process was studied to elucidate the effect of a Cu-rich stage on the formation of extended structural defects. Defect densities for two Cu-poor samples, one interrupted before and one after this crucial Cu-rich composition stage, were investigated by scanning transmission electron microscopy (STEM) imaging. The structure and chemical nature of individual defects were investigated by aberration-corrected high-resolution STEM in combination with electron energy-loss spectroscopy on the atomic-scale. In spite of the different defect densities between the two samples, most of the individual defects exhibited similar chemistry. In particular, the elemental distributions of atomic columns at {112} twin planes, which are very frequent in Cu(In,Ga)Se₂ thin films, were found to be the same as in the defect-free grain interiors. In contrast, within grain boundaries, dislocation cores, and other structurally more complex defects, elemental redistributions of Cu and In were observed. |
| Status: | Verlagsversion |
| URN: | urn:nbn:de:tuda-tuprints-204797 |
| Sachgruppe der Dewey Dezimalklassifikatin (DDC): | 500 Naturwissenschaften und Mathematik > 550 Geowissenschaften |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Geowissenschaften > Fachgebiet Geomaterialwissenschaft |
| Hinterlegungsdatum: | 16 Feb 2022 13:06 |
| Letzte Änderung: | 17 Feb 2022 06:01 |
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