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Switching the fracture toughness of single-crystal ZnS using light irradiation

Zhu, Tingting ; Ding, Kuan ; Oshima, Yu ; Amiri, Anahid ; Bruder, Enrico ; Stark, Robert W. ; Durst, Karsten ; Matsunaga, Katsuyuki ; Nakamura, Atsutomo ; Fang, Xufei (2021):
Switching the fracture toughness of single-crystal ZnS using light irradiation.
In: Applied Physics Letters, 118 (15), p. 154103. AIP Publishing, ISSN 0003-6951,
DOI: 10.1063/5.0047306,
[Article]

Abstract

An enormous change in the dislocation-mediated plasticity has been found in a bulk semiconductor that exhibits the photoplastic effect. Herein, we report that UV (365 nm) light irradiation during mechanical testing dramatically decreases the fracture toughness of ZnS. The crack tip toughness on a (001) single-crystal ZnS, as measured by the near-tip crack opening displacement method, is increased by ~45% in complete darkness compared to that in UV light. The increase in fracture toughness is attributed to a significant increase in the dislocation mobility in darkness, as explained by the crack tip dislocation shielding model. Our finding suggests a route toward controlling the fracture toughness of photoplastic semiconductors by tuning the light irradiation.

Item Type: Article
Erschienen: 2021
Creators: Zhu, Tingting ; Ding, Kuan ; Oshima, Yu ; Amiri, Anahid ; Bruder, Enrico ; Stark, Robert W. ; Durst, Karsten ; Matsunaga, Katsuyuki ; Nakamura, Atsutomo ; Fang, Xufei
Title: Switching the fracture toughness of single-crystal ZnS using light irradiation
Language: English
Abstract:

An enormous change in the dislocation-mediated plasticity has been found in a bulk semiconductor that exhibits the photoplastic effect. Herein, we report that UV (365 nm) light irradiation during mechanical testing dramatically decreases the fracture toughness of ZnS. The crack tip toughness on a (001) single-crystal ZnS, as measured by the near-tip crack opening displacement method, is increased by ~45% in complete darkness compared to that in UV light. The increase in fracture toughness is attributed to a significant increase in the dislocation mobility in darkness, as explained by the crack tip dislocation shielding model. Our finding suggests a route toward controlling the fracture toughness of photoplastic semiconductors by tuning the light irradiation.

Journal or Publication Title: Applied Physics Letters
Journal volume: 118
Number: 15
Publisher: AIP Publishing
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Nonmetallic-Inorganic Materials
11 Department of Materials and Earth Sciences > Material Science > Physical Metallurgy
11 Department of Materials and Earth Sciences > Material Science > Physics of Surfaces
Date Deposited: 20 Apr 2021 05:39
DOI: 10.1063/5.0047306
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