Zhu, Tingting ; Ding, Kuan ; Oshima, Yu ; Amiri, Anahid ; Bruder, Enrico ; Stark, Robert W. ; Durst, Karsten ; Matsunaga, Katsuyuki ; Nakamura, Atsutomo ; Fang, Xufei (2021)
Switching the fracture toughness of single-crystal ZnS using light irradiation.
In: Applied Physics Letters, 118 (15)
doi: 10.1063/5.0047306
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
An enormous change in the dislocation-mediated plasticity has been found in a bulk semiconductor that exhibits the photoplastic effect. Herein, we report that UV (365 nm) light irradiation during mechanical testing dramatically decreases the fracture toughness of ZnS. The crack tip toughness on a (001) single-crystal ZnS, as measured by the near-tip crack opening displacement method, is increased by ~45% in complete darkness compared to that in UV light. The increase in fracture toughness is attributed to a significant increase in the dislocation mobility in darkness, as explained by the crack tip dislocation shielding model. Our finding suggests a route toward controlling the fracture toughness of photoplastic semiconductors by tuning the light irradiation.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2021 |
| Autor(en): | Zhu, Tingting ; Ding, Kuan ; Oshima, Yu ; Amiri, Anahid ; Bruder, Enrico ; Stark, Robert W. ; Durst, Karsten ; Matsunaga, Katsuyuki ; Nakamura, Atsutomo ; Fang, Xufei |
| Art des Eintrags: | Bibliographie |
| Titel: | Switching the fracture toughness of single-crystal ZnS using light irradiation |
| Sprache: | Englisch |
| Publikationsjahr: | 16 April 2021 |
| Verlag: | AIP Publishing |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Applied Physics Letters |
| Jahrgang/Volume einer Zeitschrift: | 118 |
| (Heft-)Nummer: | 15 |
| DOI: | 10.1063/5.0047306 |
| Kurzbeschreibung (Abstract): | An enormous change in the dislocation-mediated plasticity has been found in a bulk semiconductor that exhibits the photoplastic effect. Herein, we report that UV (365 nm) light irradiation during mechanical testing dramatically decreases the fracture toughness of ZnS. The crack tip toughness on a (001) single-crystal ZnS, as measured by the near-tip crack opening displacement method, is increased by ~45% in complete darkness compared to that in UV light. The increase in fracture toughness is attributed to a significant increase in the dislocation mobility in darkness, as explained by the crack tip dislocation shielding model. Our finding suggests a route toward controlling the fracture toughness of photoplastic semiconductors by tuning the light irradiation. |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Nichtmetallisch-Anorganische Werkstoffe 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Physikalische Metallkunde 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Physics of Surfaces |
| Hinterlegungsdatum: | 20 Apr 2021 05:39 |
| Letzte Änderung: | 03 Mai 2021 08:42 |
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