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Graphene Field-Effect Transistors Employing Different Thin Oxide Films: A Comparative Study

Giambra, Marco A. ; Benfante, Antonio ; Pernice, Riccardo ; Miseikis, Vaidotas ; Fabbri, Filippo ; Reitz, Christian ; Pernice, Wolfram H. P. ; Krupke, Ralph ; Calandra, Enrico ; Stivala, Salvatore ; Busacca, Alessandro C. ; Danneau, Romain (2019)
Graphene Field-Effect Transistors Employing Different Thin Oxide Films: A Comparative Study.
In: ACS Omega, 4 (1)
doi: 10.1021/acsomega.8b02836
Artikel, Bibliographie

Kurzbeschreibung (Abstract)

In this work, we report on a comparison among graphene field-effect transistors (GFETs) employing different dielectrics as gate layers to evaluate their microwave response. In particular, aluminum oxide (Al_2O_3), titanium oxide (TiO_2), and hafnium oxide (HfO_2) have been tested. GFETs have been fabricated on a single chip and a statistical analysis has been performed on a set of 24 devices for each type of oxide. Direct current and microwave measurements have been carried out on such GFETs and short circuit current gain and maximum available gain have been chosen as quality factors to evaluate their microwave performance. Our results show that all of the devices belonging to a specific group (i.e., with the same oxide) have a well-defined performance curve and that the choice of hafnium oxide represents the best trade-off in terms of dielectric properties. Graphene transistors employing HfO2 as the dielectric layer, in fact, exhibit the best performance in terms of both the cutoff frequency and the maximum frequency of oscillation.

Typ des Eintrags: Artikel
Erschienen: 2019
Autor(en): Giambra, Marco A. ; Benfante, Antonio ; Pernice, Riccardo ; Miseikis, Vaidotas ; Fabbri, Filippo ; Reitz, Christian ; Pernice, Wolfram H. P. ; Krupke, Ralph ; Calandra, Enrico ; Stivala, Salvatore ; Busacca, Alessandro C. ; Danneau, Romain
Art des Eintrags: Bibliographie
Titel: Graphene Field-Effect Transistors Employing Different Thin Oxide Films: A Comparative Study
Sprache: Englisch
Publikationsjahr: 29 Januar 2019
Verlag: American Chemical Society
Titel der Zeitschrift, Zeitung oder Schriftenreihe: ACS Omega
Jahrgang/Volume einer Zeitschrift: 4
(Heft-)Nummer: 1
DOI: 10.1021/acsomega.8b02836
URL / URN: https://pubs.acs.org/doi/10.1021/acsomega.8b02836
Kurzbeschreibung (Abstract):

In this work, we report on a comparison among graphene field-effect transistors (GFETs) employing different dielectrics as gate layers to evaluate their microwave response. In particular, aluminum oxide (Al_2O_3), titanium oxide (TiO_2), and hafnium oxide (HfO_2) have been tested. GFETs have been fabricated on a single chip and a statistical analysis has been performed on a set of 24 devices for each type of oxide. Direct current and microwave measurements have been carried out on such GFETs and short circuit current gain and maximum available gain have been chosen as quality factors to evaluate their microwave performance. Our results show that all of the devices belonging to a specific group (i.e., with the same oxide) have a well-defined performance curve and that the choice of hafnium oxide represents the best trade-off in terms of dielectric properties. Graphene transistors employing HfO2 as the dielectric layer, in fact, exhibit the best performance in terms of both the cutoff frequency and the maximum frequency of oscillation.

Fachbereich(e)/-gebiet(e): 11 Fachbereich Material- und Geowissenschaften
11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft
11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Molekulare Nanostrukturen
Hinterlegungsdatum: 20 Nov 2020 12:01
Letzte Änderung: 20 Nov 2020 12:01
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