Kumar, Sandeep ; Dagli, Daghan ; Dehm, Simone ; Das, Chittaranjan ; Wei, Li ; Chen, Yuan ; Hennrich, Frank ; Krupke, Ralph (2020)
Vanishing Hysteresis in Carbon Nanotube Transistors Embedded in Boron Nitride/Polytetrafluoroethylene Heterolayers.
In: Physica status solidi (RRL) - Rapid research letters, 14 (8)
doi: 10.1002/pssr.202000193
Artikel, Bibliographie
Dies ist die neueste Version dieses Eintrags.
Kurzbeschreibung (Abstract)
Carbon nanotube field‐effect transistors fabricated on silicon wafers with thermal oxide often suffer from large gate‐voltage hysteresis, induced by charge trapping sites in oxides, surface hydroxyl groups, and the presence of water molecules. Surface functionalization and passivation, as well as vacuum annealing and reduced operating temperature, have shown to diminish or even eliminate hysteresis. Herein, the fabrication of nearly hysteresis‐free transistors on Si/SiO2 by embedding carbon nanotubes and the connecting electrodes in a hexagonal boron nitride (h‐BN) bottom layer and a polytetrafluoroethylene (PTFE) top layer is demonstrated. The conditions at which catalyst‐free synthesis of h‐BN on SiO2/Si with borazine is obtained, and the subsequent liquid‐phase deposition of PTFE, are discussed. Device transfer curves are measured before and after PTFE deposition. It is found that the hysteresis is reduced after PTFE deposition, but vanishes only after a waiting period of several days. Simultaneously, the on‐state current increases with time. The results give evidence for the absence of trap states in h‐BN/PTFE heterolayers and a high breakthrough field strength in those wafer‐scalable materials.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2020 |
| Autor(en): | Kumar, Sandeep ; Dagli, Daghan ; Dehm, Simone ; Das, Chittaranjan ; Wei, Li ; Chen, Yuan ; Hennrich, Frank ; Krupke, Ralph |
| Art des Eintrags: | Bibliographie |
| Titel: | Vanishing Hysteresis in Carbon Nanotube Transistors Embedded in Boron Nitride/Polytetrafluoroethylene Heterolayers |
| Sprache: | Englisch |
| Publikationsjahr: | 2 Juni 2020 |
| Verlag: | Wiley-VCH |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Physica status solidi (RRL) - Rapid research letters |
| Jahrgang/Volume einer Zeitschrift: | 14 |
| (Heft-)Nummer: | 8 |
| DOI: | 10.1002/pssr.202000193 |
| URL / URN: | https://onlinelibrary.wiley.com/doi/full/10.1002/pssr.202000... |
| Zugehörige Links: | |
| Kurzbeschreibung (Abstract): | Carbon nanotube field‐effect transistors fabricated on silicon wafers with thermal oxide often suffer from large gate‐voltage hysteresis, induced by charge trapping sites in oxides, surface hydroxyl groups, and the presence of water molecules. Surface functionalization and passivation, as well as vacuum annealing and reduced operating temperature, have shown to diminish or even eliminate hysteresis. Herein, the fabrication of nearly hysteresis‐free transistors on Si/SiO2 by embedding carbon nanotubes and the connecting electrodes in a hexagonal boron nitride (h‐BN) bottom layer and a polytetrafluoroethylene (PTFE) top layer is demonstrated. The conditions at which catalyst‐free synthesis of h‐BN on SiO2/Si with borazine is obtained, and the subsequent liquid‐phase deposition of PTFE, are discussed. Device transfer curves are measured before and after PTFE deposition. It is found that the hysteresis is reduced after PTFE deposition, but vanishes only after a waiting period of several days. Simultaneously, the on‐state current increases with time. The results give evidence for the absence of trap states in h‐BN/PTFE heterolayers and a high breakthrough field strength in those wafer‐scalable materials. |
| Freie Schlagworte: | Boron nitride, carbon nanotubes, hysteresis, polytetrafluoroethylene, transistors DFG Projekt KR3670/3-1 |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Molekulare Nanostrukturen |
| Hinterlegungsdatum: | 20 Nov 2020 08:05 |
| Letzte Änderung: | 10 Jan 2024 09:25 |
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Vanishing Hysteresis in Carbon Nanotube Transistors Embedded in Boron Nitride/Polytetrafluoroethylene Heterolayers. (deposited 09 Jan 2024 12:46)
- Vanishing Hysteresis in Carbon Nanotube Transistors Embedded in Boron Nitride/Polytetrafluoroethylene Heterolayers. (deposited 20 Nov 2020 08:05) [Gegenwärtig angezeigt]
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