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Mapping of individual dislocations with dark-field X-ray microscopy

Jakobsen, A. C. ; Simons, Hugh ; Ludwig, W. ; Yildirim, C. ; Leemreize, H. ; Porz, Lukas ; Detlefs, C. ; Poulsen, H. F. (2018)
Mapping of individual dislocations with dark-field X-ray microscopy.
In: Journal of Applied Crystallography, 52 (1)
doi: 10.1107/S1600576718017302
Artikel, Bibliographie

Kurzbeschreibung (Abstract)

This article presents an X-ray microscopy approach for mapping deeply embedded dislocations in three dimensions using a monochromatic beam with a low divergence. Magnified images are acquired by inserting an X-ray objective lens in the diffracted beam. The strain fields close to the core of dislocations give rise to scattering at angles where weak beam conditions are obtained. Analytical expressions are derived for the image contrast. While the use of the objective implies an integration over two directions in reciprocal space, scanning an aperture in the back focal plane of the microscope allows a reciprocal-space resolution of DQ/Q < 5 x10^-5 in all directions, ultimately enabling highprecision mapping of lattice strain and tilt. The approach is demonstrated on three types of samples: a multi-scale study of a large diamond crystal in transmission, magnified section topography on a 140 mm-thick SrTiO3 sample and a reflection study of misfit dislocations in a 120 nm-thick BiFeO3 film epitaxially grown on a thick substrate. With optimal contrast, the half-widths at half-maximum of the dislocation lines are 200 nm.

Typ des Eintrags: Artikel
Erschienen: 2018
Autor(en): Jakobsen, A. C. ; Simons, Hugh ; Ludwig, W. ; Yildirim, C. ; Leemreize, H. ; Porz, Lukas ; Detlefs, C. ; Poulsen, H. F.
Art des Eintrags: Bibliographie
Titel: Mapping of individual dislocations with dark-field X-ray microscopy
Sprache: Englisch
Publikationsjahr: 5 Dezember 2018
Titel der Zeitschrift, Zeitung oder Schriftenreihe: Journal of Applied Crystallography
Jahrgang/Volume einer Zeitschrift: 52
(Heft-)Nummer: 1
DOI: 10.1107/S1600576718017302
URL / URN: https://onlinelibrary.wiley.com/iucr/doi/10.1107/S1600576718...
Kurzbeschreibung (Abstract):

This article presents an X-ray microscopy approach for mapping deeply embedded dislocations in three dimensions using a monochromatic beam with a low divergence. Magnified images are acquired by inserting an X-ray objective lens in the diffracted beam. The strain fields close to the core of dislocations give rise to scattering at angles where weak beam conditions are obtained. Analytical expressions are derived for the image contrast. While the use of the objective implies an integration over two directions in reciprocal space, scanning an aperture in the back focal plane of the microscope allows a reciprocal-space resolution of DQ/Q < 5 x10^-5 in all directions, ultimately enabling highprecision mapping of lattice strain and tilt. The approach is demonstrated on three types of samples: a multi-scale study of a large diamond crystal in transmission, magnified section topography on a 140 mm-thick SrTiO3 sample and a reflection study of misfit dislocations in a 120 nm-thick BiFeO3 film epitaxially grown on a thick substrate. With optimal contrast, the half-widths at half-maximum of the dislocation lines are 200 nm.

Fachbereich(e)/-gebiet(e): 11 Fachbereich Material- und Geowissenschaften
11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft
11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Nichtmetallisch-Anorganische Werkstoffe
Hinterlegungsdatum: 15 Okt 2020 06:27
Letzte Änderung: 15 Okt 2020 06:27
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