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Multistep stochastic mechanism of polarization reversal in rhombohedral ferroelectrics

Genenko, Yuri A. and Khachaturyan, R. and Vorotiahin, Ivan S. and Schultheiß, Jan and Daniels, John E. and Grünebohm, Anna and Koruza, Jurij (2020):
Multistep stochastic mechanism of polarization reversal in rhombohedral ferroelectrics.
In: Physical Review B, 102 (6), pp. 064107. American Physical Society, ISSN 1098-0121,
DOI: 10.1103/PhysRevB.102.064107,
[Article]

Abstract

A stochastic model for the field-driven polarization reversal in rhombohedral ferroelectrics is developed, providing a description of their temporal electromechanical response. Application of the model to simultaneous measurements of polarization and strain kinetics in a rhombohedral Pb(Zr, Ti)O3 ceramic over a wide time window allows the identification of preferable switching paths, fractions of individual switching processes, and their activation fields. In conjunction, the phenomenological Landau-Ginzburg-Devonshire theory is used to analyze the impact of an external field and stress on switching barriers, showing that residual mechanical stress may promote the fast switching.

Item Type: Article
Erschienen: 2020
Creators: Genenko, Yuri A. and Khachaturyan, R. and Vorotiahin, Ivan S. and Schultheiß, Jan and Daniels, John E. and Grünebohm, Anna and Koruza, Jurij
Title: Multistep stochastic mechanism of polarization reversal in rhombohedral ferroelectrics
Language: English
Abstract:

A stochastic model for the field-driven polarization reversal in rhombohedral ferroelectrics is developed, providing a description of their temporal electromechanical response. Application of the model to simultaneous measurements of polarization and strain kinetics in a rhombohedral Pb(Zr, Ti)O3 ceramic over a wide time window allows the identification of preferable switching paths, fractions of individual switching processes, and their activation fields. In conjunction, the phenomenological Landau-Ginzburg-Devonshire theory is used to analyze the impact of an external field and stress on switching barriers, showing that residual mechanical stress may promote the fast switching.

Journal or Publication Title: Physical Review B
Journal volume: 102
Number: 6
Publisher: American Physical Society
Uncontrolled Keywords: GE 1171/7-1 ; KP 5100/1-1
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Materials Modelling
11 Department of Materials and Earth Sciences > Material Science > Nonmetallic-Inorganic Materials
Date Deposited: 21 Aug 2020 06:32
DOI: 10.1103/PhysRevB.102.064107
Official URL: https://journals.aps.org/prb/abstract/10.1103/PhysRevB.102.0...
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