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Oxygen diffusion barriers for epitaxial thin-film heterostructures with highly conducting SrMoO3 electrodes

Salg, Patrick and Zeinar, Lukas and Radetinac, Aldin and Walk, Dominik and Maune, Holger and Jakoby, Rolf and Alff, Lambert and Komissinskiy, Philipp (2020):
Oxygen diffusion barriers for epitaxial thin-film heterostructures with highly conducting SrMoO3 electrodes.
In: Journal of Applied Physics, 127 (6), pp. 065302. American Institute of Physics, ISSN 0021-8979,
DOI: 10.1063/1.5129767,
[Article]

Abstract

Transition metal perovskite oxide SrMoO3 with a Mo4+ 4d2 electronic configuration exhibits a room-temperature resistivity of 5.1 μΩcm in a single-crystal form and, therefore, is considered a prominent conducting electrode material for all-oxide microelectronic devices. Stabilization of the unfavorable Mo4+ valence state in SrMoO3 thin films necessitates reductive growth conditions that are often incompatible with a highly oxidative environment necessary to grow epitaxial heterostructures with fully oxygenated functional layers (e.g., tunable dielectric BaxSr1−xTiO3). Interestingly, only a few unit cells of the perovskite titanate capping layers SrTiO3, BaTiO3, and Ba0.5Sr0.5TiO3 act as an efficient oxygen barrier and minimize SrMoO3 oxidation into electrically insulating SrMoO4 in the broad range of the thin-film growth parameters. The Mo valence state in SrMoO3, determined by x-ray photoelectron spectroscopy, is used to analyze oxygen diffusion through the capping layers. The lowest level of oxygen diffusion is observed in Ba0.5Sr0.5TiO3. A Ba0.5Sr0.5TiO3 film with a thickness of only 6 unit cells preserves the Mo4+ oxidation state in the SrMoO3 underlayer up to the oxygen partial pressure of 8 mTorr at the temperature of 630 ∘C. Results, therefore, indicate that SrMoO3 films covered with atomically thin Ba0.5Sr0.5TiO3 remain conducting in an oxygen environment and can be integrated into all-oxide thin-film heterostructures with other functional materials.

Item Type: Article
Erschienen: 2020
Creators: Salg, Patrick and Zeinar, Lukas and Radetinac, Aldin and Walk, Dominik and Maune, Holger and Jakoby, Rolf and Alff, Lambert and Komissinskiy, Philipp
Title: Oxygen diffusion barriers for epitaxial thin-film heterostructures with highly conducting SrMoO3 electrodes
Language: English
Abstract:

Transition metal perovskite oxide SrMoO3 with a Mo4+ 4d2 electronic configuration exhibits a room-temperature resistivity of 5.1 μΩcm in a single-crystal form and, therefore, is considered a prominent conducting electrode material for all-oxide microelectronic devices. Stabilization of the unfavorable Mo4+ valence state in SrMoO3 thin films necessitates reductive growth conditions that are often incompatible with a highly oxidative environment necessary to grow epitaxial heterostructures with fully oxygenated functional layers (e.g., tunable dielectric BaxSr1−xTiO3). Interestingly, only a few unit cells of the perovskite titanate capping layers SrTiO3, BaTiO3, and Ba0.5Sr0.5TiO3 act as an efficient oxygen barrier and minimize SrMoO3 oxidation into electrically insulating SrMoO4 in the broad range of the thin-film growth parameters. The Mo valence state in SrMoO3, determined by x-ray photoelectron spectroscopy, is used to analyze oxygen diffusion through the capping layers. The lowest level of oxygen diffusion is observed in Ba0.5Sr0.5TiO3. A Ba0.5Sr0.5TiO3 film with a thickness of only 6 unit cells preserves the Mo4+ oxidation state in the SrMoO3 underlayer up to the oxygen partial pressure of 8 mTorr at the temperature of 630 ∘C. Results, therefore, indicate that SrMoO3 films covered with atomically thin Ba0.5Sr0.5TiO3 remain conducting in an oxygen environment and can be integrated into all-oxide thin-film heterostructures with other functional materials.

Journal or Publication Title: Journal of Applied Physics
Journal volume: 127
Number: 6
Publisher: American Institute of Physics
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Advanced Thin Film Technology
18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics
18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics > Terahertz Systems Technology
Date Deposited: 24 Jul 2020 06:58
DOI: 10.1063/1.5129767
Official URL: https://doi.org/10.1063/1.5129767
Projects: This work was funded by the Deutsche Forschungsgemeinschaft (DFG) as part of Project Nos. KO 4093/1-4 and JA 921/31-4, as well as the BMBF VIP+ Project No. 03VP01150 and TU Darmstadt/Entega Pioneer Fund for Innovation.
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